Thermosetting Adhesive Release Layer for Wafer Thinning

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Solution Overview

Problem

Existing methods for thinning wafers in semiconductor manufacturing face challenges with wafer damage from UV radiation and poor thermal stability of thermoplastic adhesives, necessitating a method for stable bonding and easy separation at high temperatures.

Innovation Solution

A method involving a bonding layer with thermosetting glue and release layers, where polydimethylsiloxane and hexamethyldisiloxane are used to form deposition layers, allowing for strong bonding and easy separation of the wafer from the carrier, even at high temperatures, using chemical vapor deposition and plasma treatment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If UV curable adhesive is used as the glue layer, then bonding strength is improved, but the wafer is damaged from UV radiation

Engineering Contradiction:
Improvebonding strengthVSAvoidwafer damage from UV radiation
Core Design Contradiction:
StrengthVSObject-affected harmful factors

Solution Approach 1:

A release layer is introduced as an intermediary between the UV curable adhesive and the wafer. This release layer allows the adhesive to be cured with UV radiation while protecting the wafer from direct UV exposure, thus maintaining bonding strength without causing wafer damage

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The bonding structure is segmented into multiple functional layers: the UV curable adhesive layer for bonding, the release layer for UV protection and separation, and the wafer substrate. This segmentation allows each layer to perform its specific function independently, resolving the contradiction between bonding strength and UV damage

Inventive Principle:
Principle #1Segmentation

2Object-affected harmful factors

If thermoplastic adhesive is adopted as the glue layer, then wafer damage from UV radiation is avoided, but high temperature process cannot be applied due to poor thermal stability

Engineering Contradiction:
Improvewafer damage from UV radiationVSAvoidhigh temperature process capability
Core Design Contradiction:
Object-affected harmful factorsVSTemperature

Solution Approach 1:

The release layer serves as a thermal barrier and protective intermediary, allowing the use of UV curable adhesive (which has good thermal stability) while still protecting the wafer from UV radiation. This enables both UV protection and high temperature process capability

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The bonding structure uses composite materials combining UV curable adhesive (for thermal stability and bonding strength) with a release layer (for UV protection). This composite structure achieves both protection from UV radiation and capability for high temperature processing

Inventive Principle:
Principle #40Composite materials

3Reliability

If strong bonding is achieved between wafer and carrier, then processing stability is improved, but separation of carrier from wafer becomes difficult

Engineering Contradiction:
Improveprocessing stabilityVSAvoidease of separation
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The release layer acts as a mediator between the adhesive and the wafer/carrier. During processing, it provides strong bonding stability; during separation, it allows easy detachment by reducing adhesion, thus resolving the contradiction between processing stability and ease of separation

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The bonding interface dynamics are made adjustable through the release layer. The layer provides strong bonding during the processing phase and enables easy separation when needed, making the bonding characteristic dynamic rather than static

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables stable bonding of the wafer to the carrier with enhanced thermal stability, allowing for effective thinning and easy separation without damaging the wafer, while maintaining high temperature process integrity.

Implementation Method 1

forming a deposition layer on the precursor layer by a chemical vapor deposition where the hexamethyldisiloxane (HMDSO) is adopted as a reaction gas

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 2

removing a remainder of the second release layer from the glue layer by plasma including at least one of oxygen, nitrogen and argon

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentUS9595446B2Methods of processing substrates
Publication Date: 2017.03.14 SAMSUNG ELECTRONICS CO LTD
  • US9595446B2 patent drawing
  • US9595446B2 patent drawing
  • US9595446B2 patent drawing

AI summary

Methods processing substrates are provided. The method may include providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting glue layer and thermosetting release layers provided on opposing sides of the thermosetting glue layer.