Thermosetting Release Layer for Wafer Bonding and Separation

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Solution Overview

Problem

Existing methods for thinning wafers using UV curable adhesives can damage the wafer, while thermoplastic adhesives lack thermal stability, necessitating a method for stable bonding and easy separation of wafers from carriers during high temperature processes.

Innovation Solution

A method involving a bonding layer with thermosetting release and glue layers, where the bonding force between the release layer and glue layers is weaker than between the glue layers and the substrate/cARRIER, allowing for stable bonding and easy separation, using materials like siloxane and polydimethylsiloxane, and a chemical vapor deposition process for forming these layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If UV curable adhesive is used to bond wafer to carrier, then bonding strength is improved, but wafer damage occurs due to UV radiation

Engineering Contradiction:
Improvebonding strengthVSAvoidwafer damage from UV radiation
Core Design Contradiction:
StrengthVSObject-affected harmful factors

Solution Approach 1:

A release layer is introduced as an intermediary between the UV curable adhesive and the wafer. This release layer allows the adhesive to bond the carrier to the wafer while preventing direct UV radiation damage to the wafer during the curing process

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The bonding interface is segmented into multiple functional layers: a first adhesive layer for bonding, a release layer for protection and controlled separation, and a second adhesive layer for additional bonding. This segmentation allows each layer to perform its specific function without interfering with others

Inventive Principle:
Principle #1Segmentation

2Object-affected harmful factors

If thermoplastic adhesive is used to bond wafer to carrier, then wafer damage from UV radiation is avoided, but thermal stability deteriorates preventing high temperature processes

Engineering Contradiction:
Improvewafer damage from UV radiationVSAvoidthermal stability
Core Design Contradiction:
Object-affected harmful factorsVSStability of the object's composition

Solution Approach 1:

The bonding system uses a composite structure combining thermoplastic adhesive materials with a release layer. The thermoplastic adhesive provides thermal stability and resistance to UV radiation, while the release layer enables controlled separation. The composite structure achieves both protection from UV damage and stability under high temperature conditions

Inventive Principle:
Principle #40Composite materials

3Strength

If strong bonding is used to bond wafer to carrier, then bonding strength is improved, but separation difficulty increases

Engineering Contradiction:
Improvebonding strengthVSAvoidseparation ease
Core Design Contradiction:
StrengthVSEase of operation

Solution Approach 1:

The bonding interface is divided into multiple layers with different bonding characteristics. The release layer is specifically designed with weaker bonding strength to the wafer compared to the adhesive layers, creating a controlled weak point that allows easy separation while maintaining strong overall bonding during processing

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the bonding structure have different bonding strengths tailored to their specific functions. The adhesive layers provide strong bonding for structural support, while the release layer provides localized weak bonding for easy separation, achieving both strong bonding and easy separation simultaneously

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables stable bonding of wafers to carriers during high temperature processes without damaging the wafer, facilitating easy separation and maintaining thermal stability, which is crucial for semiconductor processing.

Implementation Method 1

providing a second thermosetting material on the first glue layer to form the release layer may comprise coating a precursor that includes at least one of polydimethylsiloxane (PDMS) and hexamethyldisiloxane (HMDSO) on the first glue layer and performing a chemical vapor deposition process using the hexamethyldisiloxane (HMDSO) as a reaction gas

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 2

the bonding layer may include a thermosetting release layer and thermosetting glue layers

Methodology Applied
Scientific EffectThermosetting:

Data Source

PatentUS9412636B2Methods for processing substrates
Publication Date: 2016.08.09 SAMSUNG ELECTRONICS CO LTD
  • US9412636B2 patent drawing
  • US9412636B2 patent drawing
  • US9412636B2 patent drawing

AI summary

A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting release layer and thermosetting glue layers, wherein at least one of the thermosetting glue layers is provided on each side of the thermosetting release layer.