Thick Film Resist Composition for High Aspect Ratio Patterning
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Solution Overview
Problem
Current resist compositions face challenges in forming thick films with high aspect ratios, experiencing issues with coating properties, sensitivity, environmental impact, pattern shrinkage, solubility, defect reduction, storage stability, and etching resistance during the semiconductor manufacturing process.
Innovation Solution
A thick film resist composition comprising a polymer, a deprotecting agent, a photoreaction quencher, and a solvent, where the photoreaction quencher suppresses acid diffusion and environmental impact, allowing for improved film formation and high aspect ratio pattern creation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the viscosity of the composition is increased to obtain a thick resist film, then the film thickness is improved, but uniformity of the film thickness deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the resist system by introducing a photoreaction quencher with specific molecular weight range (300-1400) and specific functional groups, which modifies the coating behavior and acid diffusion characteristics, enabling uniform thick film formation at higher viscosities
Solution Approach 2:
The patent creates a composite resist composition system combining polymer, deprotecting agent, photoreaction quencher, and solvent in specific proportions, where the photoreaction quencher acts as a key component controlling both film uniformity and acid diffusion, achieving thick film formation with maintained uniformity
2Duration of action of moving object
If the time from exposure to post exposure bake is extended, then the deprotection reaction is improved, but the resist pattern shape changes due to environmental impact
Solution Approach 1:
The photoreaction quencher acts as an intermediary substance that selectively interacts with diffusing protons in the exposed region, modulating acid diffusion without completely blocking it, thereby maintaining pattern shape stability while allowing sufficient deprotection reaction to occur
Solution Approach 2:
The photoreaction quencher creates a chemically controlled environment within the resist film by neutralizing environmental amines and controlling acid-base reactions, effectively isolating the deprotection process from external environmental impacts during the exposure to PEB period
3Stability of the object's composition
If a base compound such as amine is added to reduce environmental impact, then the resist pattern stability is improved, but the coating properties deteriorate
Solution Approach 1:
The patent optimizes the molecular weight parameter of the photoreaction quencher within a specific range (300-1400), which balances the basicity needed for environmental impact reduction with the coating properties required for uniform film formation, avoiding the drawbacks of conventional amine additives
4Volume of moving object
If the film thickness is increased, then the aspect ratio is improved, but the accuracy of the device formed deteriorates when the cross section is not rectangular
Solution Approach 1:
The patent modifies the acid diffusion characteristics by introducing the photoreaction quencher, which controls proton migration during PEB, thereby achieving rectangular cross-section profiles in thick resist films that are necessary for high-precision device formation
Data Source
AI summary
[Problem] Providing a thick film resist composition capable of reducing environmental impact. [Means for Solution] A thick film resist composition comprising polymer (A), a deprotecting agent (B), a photoreaction quencher (C) composed of a certain cation and an anion, and a solvent (D).