Thick Metal Layers with 3D Sidewalls for Semiconductor Support
Solution Overview
Problem
Semiconductor light-emitting devices require additional mounts for mechanical support, which increases costs and complicates processing, and existing thick metal layers do not effectively anchor insulating materials during substrate removal and dicing, potentially leading to device failure.
Innovation Solution
The implementation of thick metal layers with three-dimensional features on their sidewalls to anchor electrically insulating materials, providing mechanical support to the semiconductor structure and preventing cracking during processing steps like substrate removal and dicing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If additional mounts are used to provide mechanical support to semiconductor devices, then structural support is improved, but device complexity and processing complexity increase
Solution Approach 1:
The patent merges the mechanical support function with the metal contact layers themselves. The thick metal layers (first and second metal layers) are designed to provide both electrical contact and structural mechanical support, eliminating the need for separate mount structures. This integration reduces device complexity while maintaining the required mechanical strength.
2Ease of manufacture
If smooth sidewalls are used on metal layers, then manufacturing is simpler, but insulating material anchoring is insufficient leading to device failure
Solution Approach 1:
The patent transitions from a two-dimensional smooth sidewall to a three-dimensional textured sidewall structure. The sidewalls incorporate features such as protrusions, recesses, or roughened surfaces that extend in the vertical dimension, providing mechanical interlocking surfaces for the insulating material while maintaining manufacturability through standard deposition and etching processes.
3Strength
If thick metal layers are used to support semiconductor structures during substrate removal and dicing, then mechanical strength is improved, but manufacturing complexity increases without proper anchoring features
Solution Approach 1:
The patent incorporates anchoring features during the metal layer formation process itself, before subsequent processing steps. The three-dimensional sidewall features are created as part of the metal layer deposition and patterning sequence, preparing the structure in advance to securely hold insulating materials during later substrate removal and dicing operations, thereby avoiding additional complex manufacturing steps.
Data Source
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AI summary
A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region and first and second metal contacts, wherein the first metal contact is in direct contact with the n-type region and the second metal contact is in direct contact with the p-type region. First and second metal layers are disposed on the first and second metal contacts, respectively. The first and second metal layers are sufficiently thick to mechanically support the semiconductor structure. A sidewall of one of the first and second metal layers comprises a three-dimensional feature.