Thick Metal Layers for Mechanical Support in Semiconductor Light Emitting Devices
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Solution Overview
Problem
Semiconductor light-emitting devices require additional mounts for mechanical support, which increases costs and complicates processing.
Innovation Solution
Thick metal layers are formed on the semiconductor device's n-type and p-type regions to provide mechanical support, eliminating the need for external mounts by being configured to match the shape of the metal contacts and integrated with reflective sidewalls for enhanced stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If additional mounts are used to provide mechanical support to semiconductor light-emitting devices, then the mechanical stability and support are improved, but the device complexity and manufacturing cost increase
Solution Approach 1:
The patent combines the electrical contact function and mechanical support function into a single integrated metal layer structure. The thick metal layers (5-50 micrometers) serve dual purposes: providing electrical connectivity to the semiconductor device and providing the mechanical support previously requiring separate mounts, thereby eliminating additional components and simplifying the overall device structure
Solution Approach 2:
The metal layers are designed to perform multiple functions simultaneously: electrical conduction, mechanical support, and thermal management. This multi-functionality eliminates the need for separate mounts and reduces the overall component count, directly addressing the contradiction between mechanical support and device complexity
2Stability of the object's composition
If additional mounts are used to provide mechanical support to semiconductor light-emitting devices, then the mechanical stability is improved, but the manufacturing cost increases
Solution Approach 1:
The patent merges the support function into the existing metal contact layers, eliminating the need for separate mounts. This integration reduces the number of manufacturing steps, materials required, and assembly operations, directly reducing manufacturing cost while maintaining mechanical stability
Solution Approach 2:
The patent extracts the mechanical support function from separate mount components and integrates it into the metal layers that are already part of the device structure. This elimination of unnecessary components simplifies the bill of materials and reduces manufacturing complexity and cost
3Strength
If thick metal layers are formed on metal contacts, then the mechanical support capability is improved, but the material consumption increases
Solution Approach 1:
The patent applies thick metal layers (5-50 micrometers) specifically where mechanical support and electrical contact are needed, rather than uniformly across the entire device. This localized application provides the necessary structural strength at critical points while minimizing overall material consumption
Solution Approach 2:
The patent changes the thickness parameter of the metal layers from conventional thin dimensions to thick dimensions (5-50 micrometers) specifically to provide mechanical support. This parameter change enables the metal layers to serve as structural support elements while the reflective sidewalls are optimized to minimize material usage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thick metal layers effectively support the semiconductor structure during processing and operation, reducing the need for additional mounts, simplifying the manufacturing process, and potentially improving thermal conductivity and device efficiency.
Implementation Method 1
Metal layers 78 and 79 are selected to be ductile, have high thermal and electrical conductivity
Implementation Method 2
A portion of a sidewall of the device adjacent to one of the first and second metal layers is reflective
Data Source
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AI summary
A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region and first and second metal contacts, wherein the first metal contact is in direct contact with the n-type region and the second metal contact is in direct contact with the p-type region. First and second metal layers are disposed on the first and second metal contacts, respectively. The first and second metal layers are sufficiently thick to mechanically support the semiconductor structure. A portion of a sidewall the device adjacent to one of the first and second metal layers is reflective.