Thickened Resist Pattern Layering for Resolution and Mask Durability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for manufacturing resist patterns face challenges in thickening fine patterns, achieving sufficient resolution with increased numerical aperture, maintaining pattern shape integrity, and widening the process window, especially in high-definition lithography where resist film thickness affects durability and etching mask performance.
Innovation Solution
A method involving the application of a resist composition followed by exposure and then a thickening solution comprising a polymer and solvent to form a thickening layer before development, which enhances resist film thickness and durability, allowing for improved resolution and process window stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the resist film thickness is increased to improve durability as an etching mask, then the mask durability is improved, but the process window becomes narrower and pattern collapse is more likely to occur
Solution Approach 1:
The patent divides the resist system into two separate layers: a thin resist layer (5-20 nm) for pattern formation and a thick thickening layer (5-50 nm) for mask durability. This segmentation allows each layer to perform its specific function optimally without the trade-offs of using a single thick resist layer, thereby resolving the contradiction between mask durability and process window.
2Manufacturing precision
If the resist film thickness is decreased to widen the process window, then the process window is widened, but the mask durability is insufficient and the substrate may be scraped during etching
Solution Approach 1:
The patent divides the resist system into two separate layers: a thin resist layer (5-20 nm) for pattern formation and a thick thickening layer (5-50 nm) for mask durability. This segmentation allows each layer to perform its specific function optimally without the trade-offs of using a single thick resist layer, thereby resolving the contradiction between mask durability and process window.
3Reliability
If a thick resist layer is used to ensure mask durability, then the mask durability is improved, but the resolution and pattern shape control become more difficult
Solution Approach 1:
The patent divides the resist system into two separate layers: a thin resist layer (5-20 nm) for pattern formation and a thick thickening layer (5-50 nm) for mask durability. This segmentation allows each layer to perform its specific function optimally without the trade-offs of using a single thick resist layer, thereby resolving the contradiction between mask durability and process window.
4Reliability
If the resist film is thickened to improve etching mask performance, then the etching resistance is improved, but the pattern shape integrity deteriorates due to focus and exposure amount shifts
Solution Approach 1:
The patent divides the resist system into two separate layers: a thin resist layer (5-20 nm) for pattern formation and a thick thickening layer (5-50 nm) for mask durability. This segmentation allows each layer to perform its specific function optimally without the trade-offs of using a single thick resist layer, thereby resolving the contradiction between mask durability and process window.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively thickens resist patterns, enhances their durability as etching masks, and widens the process window, improving manufacturing yield and pattern integrity in high-definition lithography.
Implementation Method 1
a chemically amplified resist composition, and more specifically, a PHS-acrylate hybrid-based chemically amplified resist composition
Data Source
AI summary
[Problem] To provide a method for manufacturing a thickened resist pattern. [Means for Solution] A method for manufacturing a thickened resist pattern comprising the following steps: (1) applying a resist composition above a substrate to form a resist layer from the resist composition; (2a) exposing the resist layer; (2b) applying a thickening solution comprising a polymer (A) and a solvent (B) on the resist layer to form a thickening layer; and (3) developing the resist layer and the thickening layer.