Thin Absorber Photovoltaic Device With Intermediate Layer
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Solution Overview
Problem
Current solar cells have low efficiency and high production costs, limiting their adoption as a mainstream energy source due to their inefficiency and rigidity, which restricts their applications.
Innovation Solution
A photovoltaic device with a thin n-doped and p+-doped layer configuration, forming a p-n layer to enhance electric energy generation efficiency, fabricated using epitaxial layers and techniques like molecular beam epitaxy or metalorganic chemical vapor deposition, resulting in a thinner absorber layer that increases efficiency and flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional solar cell structures are used, then manufacturing processes are simpler, but efficiency is low and production costs are high
Solution Approach 1:
The solar cell is divided into multiple functional layers including n-doped layer, p+-doped layer, and intermediate layer, with each layer performing specific functions to optimize overall efficiency while managing complexity through functional segmentation
Solution Approach 2:
Different regions of the solar cell have different doping concentrations and material compositions optimized for their specific functions - the n-doped layer has specific properties for electron collection, the p+-doped layer for hole collection, and the intermediate layer for transition, creating local quality variations that enhance overall efficiency
2Use of energy by moving object
If thicker absorber layers are used, then light absorption is improved, but flexibility is reduced and device weight increases
Solution Approach 1:
The solar cell uses composite material structure combining n-doped semiconductor material, p+-doped semiconductor material, and intermediate layer materials with different properties, allowing optimization of light absorption in the thinner overall structure while maintaining flexibility through material selection
Solution Approach 2:
The patent optimizes the thickness and doping parameters of each layer to achieve maximum light absorption efficiency in a thinner overall structure, using parameter optimization to decouple the traditional trade-off between absorption thickness and device flexibility
3Reliability
If conventional p-n junction structures are used, then manufacturing is simpler, but dark current is high and open circuit voltage is reduced
Solution Approach 1:
An intermediate layer is introduced between the n-doped layer and p+-doped layer to act as a mediator that reduces dark current flow while maintaining the p-n junction functionality, thereby increasing open circuit voltage without significantly complicating the manufacturing process
Solution Approach 2:
The patent replaces the conventional direct p-n junction interface with an intermediate layer structure that substitutes the direct contact mechanism, reducing harmful dark current through the intermediate layer's specific electrical properties while maintaining manufacturability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves higher efficiency and flexibility, reducing dark current and increasing open circuit voltage, making solar cells more viable for various applications while lowering production costs.
Implementation Method 1
the junction of a solar cell absorbs photons to produce electron-hole pairs, which are separated by the internal electric field of the junction to generate a voltage, thereby converting light energy to electric energy
Implementation Method 2
the junction of a solar cell absorbs photons to produce electron-hole pairs, which are separated by the internal electric field of the junction to generate a voltage
Data Source
AI summary
Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.


