Thin Bonded Interposer Package Thermal Management
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Solution Overview
Problem
Conventional semiconductor packaging methods face limitations in providing efficient thermal management and high-density electrical connectivity, particularly in package-on-package configurations, which restrict thermal conductivity and bandwidth due to the absence of direct contact between the back of the die and heat spreaders and restrictive form factors.
Innovation Solution
A thin bonded interposer package is developed, featuring a semiconductor die bonded to a substrate with a mold material, an interposer, and embedded thermal elements, where the interposer extends beyond the die edges, providing direct thermal contact and high-density metal contacts for improved thermal conductivity and electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional semiconductor packaging methods are used, then the package structure is simple and easy to manufacture, but thermal management efficiency is poor and electrical connectivity density is limited
Solution Approach 1:
The patent embeds thermal management elements (heat spreaders, thermal vias) and electrical interconnect structures within the package layers, nesting multiple functional components within the package substrate to improve thermal efficiency and electrical connectivity without proportionally increasing external package dimensions
Solution Approach 2:
The patent transitions from two-dimensional planar interconnects to three-dimensional vertical interconnects through the substrate, utilizing vias and through-holes to establish electrical and thermal pathways in the vertical dimension, thereby increasing connectivity density and thermal management capability
2Reliability
If package-on-package configurations are used, then electrical connectivity is improved, but thermal conductivity is restricted due to absence of direct contact between die back and heat spreaders
Solution Approach 1:
The patent introduces an interposer or substrate with embedded thermal vias and heat spreader structures that act as intermediaries between the die back and external heat sinks, providing direct thermal conduction pathways while maintaining electrical connectivity through the same or adjacent vertical pathways
Solution Approach 2:
The patent combines thermal management functions and electrical interconnect functions into integrated structures, where thermal vias and electrical vias are formed through the same substrate layers, and heat spreader regions are integrated with signal trace regions, allowing simultaneous improvement of thermal conductivity and electrical connectivity
3Productivity
If traditional packaging form factors are used, then manufacturing is straightforward, but bandwidth and thermal contact are limited
Solution Approach 1:
The patent segments the package into modular functional regions including die attach areas, interposer regions, thermal management zones, and interconnect layers, allowing independent optimization and manufacturing of each module before final assembly, thereby enabling high bandwidth designs without proportionally increasing overall manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances thermal management and electrical connectivity by allowing direct heat dissipation from the semiconductor die and increased bandwidth through the use of embedded thermal elements and extended interposer contacts, surpassing the limitations of traditional packaging methods.
Implementation Method 1
providing direct thermal contact and high-density metal contacts for improved thermal conductivity
Implementation Method 2
embedded thermal elements, where the interposer extends beyond the die edges, providing direct thermal contact and high-density metal contacts for improved thermal conductivity
Data Source
AI summary
Methods and systems for a thin bonded interposer package are disclosed and may, for example, include bonding a semiconductor die to a first surface of a substrate, forming contacts on the first surface of the substrate, encapsulating the semiconductor die, formed contacts, and first surface of the substrate using a mold material while leaving a top surface of the semiconductor die not encapsulated by mold material, forming vias through the mold material to expose the formed contacts. A bond line may be dispensed on the mold material and the semiconductor die for bonding the substrate to an interposer. A thickness of the bond line may be defined by standoffs formed on the top surface of the semiconductor die.