Thin Bonding Structure for Heat-Dissipating Memory Stacks

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Solution Overview

Problem

In semiconductor device stacking, existing technologies face challenges in efficiently dissipating heat generated by multiple modules, which can lead to thermal management issues and increased manufacturing costs due to complex processes required for thermal conductivity enhancement.

Innovation Solution

The implementation of thin bonding films and high thermal conductivity materials, such as aluminum nitride films, between silicon layers and memory or thermal enhance modules, along with fusion bonding processes, eliminates the need for complex processes like etch patterning and CMP, reducing material and manufacturing costs while creating effective thermal dissipation paths.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If complex processes like etch patterning and CMP are used to enhance thermal conductivity, then thermal dissipation performance is improved, but manufacturing cost and process complexity increase

Engineering Contradiction:
Improvethermal dissipation performanceVSAvoidprocess complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the complex etch patterning and CMP processes from the manufacturing flow, replacing them with a simpler bonding structure that achieves thermal dissipation through material selection and structural design rather than complex surface processing

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent employs composite material structures in the bonding layers, combining materials with high thermal conductivity to achieve effective heat dissipation paths without requiring complex processing steps, thus resolving the contradiction between thermal performance and manufacturing complexity

Inventive Principle:
Principle #40Composite materials

2Temperature

If thin bonding films are used to reduce thermal resistance, then thermal dissipation is improved, but bonding strength and reliability may be compromised

Engineering Contradiction:
Improvethermal resistanceVSAvoidbonding strength
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent optimizes the thickness parameter of bonding films to a specific range that balances thermal resistance reduction with adequate bonding strength, and selects materials with appropriate thermal and mechanical properties to achieve both thermal performance and reliability simultaneously

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables efficient heat dissipation across the semiconductor device, reducing thermal resistance and manufacturing costs by simplifying the bonding process and utilizing high thermal conductivity materials to maintain device performance.

Implementation Method 1

The bonding structure includes at least one bonding film whose thickness is less than 200 Å... efficient thermal dissipation paths must be designed among those modules... enables efficient heat dissipation across the semiconductor device, reducing thermal resistance

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20240128147A1Semiconductor device
Publication Date: 2024.04.18 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240128147A1 patent drawing
  • US20240128147A1 patent drawing
  • US20240128147A1 patent drawing

AI summary

A semiconductor device is provided. The semiconductor includes a supporting silicon layer and a memory module. The memory module and the supporting silicon layer are bonded via a bonding structure. The bonding structure includes at least one bonding film whose thickness is less than 200 Å.