Thin-Die Support Structure for Low-Warpage Semiconductor Packages
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Solution Overview
Problem
Conventional semiconductor package manufacturing methods, such as sawing, result in warpage and cracking of semiconductor dies, compromising package reliability and limiting shape flexibility, as they are typically restricted to square or rectangular shapes and struggle with thinning and handling of large dies.
Innovation Solution
The use of etching techniques to form notches in semiconductor wafers instead of sawing, allowing for thinner dies with reduced warpage and enabling various closed geometric shapes, coupled with permanent or temporary die support structures to manage warpage and enhance handling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sawing is used to manufacture semiconductor packages, then manufacturing is straightforward, but warpage and cracking occur compromising reliability
Solution Approach 1:
The patent replaces the mechanical sawing process with a chemical etching process to form notches in semiconductor wafers. This substitution eliminates the mechanical stress and physical contact that cause warpage and cracking during sawing, thereby improving package reliability while maintaining manufacturing feasibility through chemical means.
Solution Approach 2:
The patent changes the manufacturing parameter from mechanical cutting to chemical etching. By altering the fundamental process parameter from mechanical force to chemical reaction, the method achieves notch formation without the warpage and cracking associated with traditional sawing, resolving the contradiction between reliability and ease of manufacture.
2Adaptability or versatility
If conventional sawing is used, then manufacturing is simple, but die shape flexibility is limited to square or rectangular
Solution Approach 1:
The patent applies local quality by forming notches at specific locations on the wafer perimeter through chemical etching. This allows different sections of the wafer to be shaped independently, enabling diverse closed geometric shapes while maintaining the simplicity of a single etching process, thus resolving the contradiction between shape flexibility and manufacturing simplicity.
3Length of moving object
If die thickness is reduced, then package size is smaller, but warpage increases and handling becomes difficult
Solution Approach 1:
The patent applies preliminary action by forming notches in the wafer before thinning the die. These pre-formed notches provide stress relief features that prevent warpage from developing during subsequent thinning and handling operations. This preliminary structural modification allows the die to be thinned to smaller dimensions while maintaining stability and reducing warpage.
4Length of moving object
If die thickness is reduced, then package size is smaller, but cracking occurs reducing reliability
Solution Approach 1:
The patent implements preliminary action by creating notches in the wafer prior to the thinning process. These notches serve as stress relief features that prevent cracking during die thinning and subsequent handling. By preparing the structural integrity features in advance, the method enables production of thinner dies without compromising reliability.
Solution Approach 2:
The patent replaces mechanical sawing with chemical etching to form notches, eliminating the mechanical stress that causes cracking during traditional manufacturing. This substitution allows die thickness to be reduced while maintaining reliability, as the chemical process does not induce the same stress concentrations and crack propagation risks as mechanical cutting.
Data Source
AI summary
Implementations of a semiconductor device may include a semiconductor die including a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof where the semiconductor die may be coupled with one of a substrate, a leadframe, an interposer, a package, a bonding surface, or a mounting surface. The thickness may be between 0.1 microns and 125 microns.