Thin Film Capacitor With Bite Connections And Ni-Cu Adhesion
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Solution Overview
Problem
Existing thin film capacitors have complex manufacturing processes, either due to build-up structures or the need for through holes in insulating substrates, which increases costs and thickness, and lack effective adhesion between metal films.
Innovation Solution
A thin film capacitor design with first and second metal films on either side of a capacitive insulating film, connected through through holes without a support substrate, featuring bite connections and a ceramic material with a perovskite structure, and using Ni and Cu for enhanced adhesion and noise reduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a build-up structure is used for the thin film capacitor, then the capacitor can be formed, but the manufacturing process becomes complicated
Solution Approach 1:
The invention extracts and eliminates the support substrate from the capacitor structure, forming the capacitor directly on the insulating film. This removes the need for through-holes in the support substrate and simplifies the manufacturing process while maintaining capacitor functionality.
Solution Approach 2:
Instead of forming the capacitor on a support substrate and then embedding it, the invention inverts the approach by forming the capacitor structure directly in the insulating film layer during the board manufacturing process, thereby simplifying the overall manufacturing flow.
2Reliability
If a support substrate made of insulator is used, then the capacitor can be formed, but a through hole needs to be formed in the support substrate which complicates the manufacturing process
Solution Approach 1:
The support substrate is extracted and removed from the structure. The capacitor is formed directly on the insulating film without requiring a separate support substrate, thereby eliminating the need for through-holes and simplifying manufacturing.
Solution Approach 2:
The capacitor structure is merged with the insulating film layer, forming an integrated structure where the capacitor electrodes are positioned on opposite surfaces of the same insulating film, eliminating the need for separate support substrate and through-holes.
3Reliability
If a build-up structure or support substrate with through hole is used, then the capacitor can be formed, but the entire thickness of the thin film capacitor increases
Solution Approach 1:
The support substrate is removed from the structure, eliminating its thickness contribution. The capacitor is formed only within the insulating film layer, significantly reducing the overall thickness of the thin film capacitor.
Solution Approach 2:
The capacitor structure is merged into the insulating film, with electrodes formed on opposite surfaces of the same film. This integration eliminates the need for additional substrate thickness and reduces the overall component thickness.
4Device complexity
If metal films are connected through through holes without bite connections, then the structure is simpler, but adhesion between metal films is insufficient
Solution Approach 1:
The bite connections are formed locally at the regions where metal films overlap, creating localized adhesion zones with enhanced bonding strength. This provides targeted adhesion enhancement without requiring complex overall structural changes.
Solution Approach 2:
The metal films are formed with overlapping regions and bite connections in advance, during the film deposition process, ensuring strong adhesion is built into the structure before subsequent manufacturing steps. This preliminary adhesion enhancement prevents delamination and ensures mechanical strength.
Data Source
AI summary
Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second through holes, a first metal film provided on one surface of the capacitive insulating film, and a second metal film provided on the other surface of the capacitive insulating film. The first and second metal films are made of different metal materials from each other. The first metal film is divided into a first area positioned outside the first space and a second area positioned inside the first space. The second metal film is divided into a third area positioned outside the second space and a fourth area positioned inside the second space. The third area is connected to the second area through the first through hole. The fourth area is connected to the first area through the second through hole.


