Thin-Film CMOS Image Sensor Crosstalk Reduction

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Solution Overview

Problem

CMOS image sensors face challenges with increased crosstalk components due to photosensor thickness, leading to image distortion and limited precision in forming three-dimensional images.

Innovation Solution

A CMOS image sensor with a thin-film-on-application specific integrated circuit (TFA) design, incorporating a floating diffusion region, thin film light sensors, via connections, micro lenses, and color filter arrays to reduce crosstalk and enhance depth information calculation for 3D image formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If the photosensor is formed with increased thickness, then light sensitivity is improved, but crosstalk components increase causing image distortion

Engineering Contradiction:
Improvelight sensitivityVSAvoidcrosstalk components
Core Design Contradiction:
Illumination intensityVSObject-affected harmful factors

Solution Approach 1:

The pixel array is divided into multiple pixel groups, with each group containing pixels of the same color (e.g., all green pixels in a 2x2 block). This segmentation allows the patent to process and analyze signals from same-color pixels separately, enabling accurate depth calculation while maintaining high light sensitivity through optimized photodiode结构设计 within each segmented group.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from traditional 2D image capture to 3D depth information extraction by utilizing the spatial arrangement of same-color pixels within pixel groups. By analyzing signal variations across multiple pixels of the same color in a grouped configuration, the system extracts depth information along the Z-axis while maintaining high light sensitivity through the grouped pixel architecture.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Ease of manufacture

If traditional CIS architecture is used, then manufacturing is simplified, but depth information precision is limited

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoiddepth information precision
Core Design Contradiction:
Ease of manufactureVSMeasurement precision

Solution Approach 1:

The pixel array is divided into multiple pixel groups, with each group containing pixels of the same color (e.g., all green pixels in a 2x2 block). This segmentation allows the patent to process and analyze signals from same-color pixels separately, enabling accurate depth calculation while maintaining high light sensitivity through optimized photodiode结构设计 within each segmented group.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from traditional 2D image capture to 3D depth information extraction by utilizing the spatial arrangement of same-color pixels within pixel groups. By analyzing signal variations across multiple pixels of the same color in a grouped configuration, the system extracts depth information along the Z-axis while maintaining high light sensitivity through the grouped pixel architecture.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively decreases crosstalk components and improves image precision, enabling efficient generation of depth information for accurate three-dimensional image production.

Implementation Method 1

each of the plurality of pixels includes a photodiode that serves as a photosensor and generates an electrical signal according to the intensity of light

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

a first micro lens disposed to correspond to at least two pixels of the plurality of pixels

Methodology Applied
Scientific EffectRefraction: Refraction

Data Source

PatentUS9343492B2CMOS image sensor based on thin-film on asic and operating method thereof
Publication Date: 2016.05.17 SAMSUNG ELECTRONICS CO LTD
  • US9343492B2 patent drawing
  • US9343492B2 patent drawing
  • US9343492B2 patent drawing

AI summary

Provided are a complementary metal-oxide semiconductor (CMOS) image sensor based on a thin-film-on-application specific integrated circuit (TFA), and a method of operating the same. The CMOS image sensor may include at least one floating diffusion region formed in a semiconductor substrate, and a thin film type light sensor disposed to correspond to a plurality of pixels. The CMOS image sensor may also include at least one via electrically connected between the light sensor and the at least one floating diffusion region. The CMOS image sensor may also include a first micro lens disposed to correspond to at least two pixels of the plurality of pixels.