Thin-Film Electrode Ring Layout for Uniform Plasma Wafer Edges
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Solution Overview
Problem
Existing plasma processing apparatuses face challenges in maintaining uniform electric field distribution and temperature control around the semiconductor wafer, particularly at the peripheral regions, leading to reduced machining accuracy and increased risk of defective devices.
Innovation Solution
A plasma processing apparatus with a sample stage and a ring-shaped thin film electrode, where the thin film electrode has specific portions located relative to the semiconductor wafer's surface, and a susceptor ring made of dielectric material covers the thin film electrode to prevent overheating, allowing for controlled high-frequency power application.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thin film electrode is provided on a dielectric ring to apply high-frequency power for improving plasma processing uniformity, then the electric field distribution is improved, but the temperature of the electrically conductive ring increases due to plasma contact
Solution Approach 1:
A dielectric ring is introduced as an intermediary between the thin film electrode and the plasma. The dielectric ring prevents direct contact between the conductive electrode and plasma, thereby preventing excessive temperature rise while still allowing the electrode to generate the necessary electric field for uniform plasma processing through capacitive coupling.
Solution Approach 2:
The system is segmented into distinct functional components: the thin film electrode for electric field generation, the dielectric ring for thermal isolation and plasma barrier, and the support structure for mechanical stability. This segmentation allows each component to perform its specific function without interfering with others, solving both the uniformity and temperature control requirements.
2Manufacturing precision
If the inner peripheral end of the thin film electrode is brought close to the wafer end portion for better electric field control, then the plasma processing uniformity is improved, but electrical interference with high-frequency power applied to the sample stage increases
Solution Approach 1:
The dielectric ring serves as an electrical intermediary that isolates the thin film electrode's high-frequency power from the sample stage. This allows the electrode to be positioned close to the wafer for improved electric field control while the dielectric material prevents harmful electrical interference with the sample stage's independent high-frequency power application.
Solution Approach 2:
The dielectric ring provides localized electrical isolation precisely where needed - between the thin film electrode and the sample stage - while allowing other regions to maintain their required electrical characteristics. This localized application of dielectric material solves the interference problem without compromising the overall plasma processing uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the reliability and yield of semiconductor wafer processing by maintaining uniform electric field distribution and preventing excessive temperature rise, thus enhancing machining accuracy and reducing defects.
Implementation Method 1
The plasma processing apparatus for performing dry etching uses various techniques... bringing processing gas into a plasma state by the plasma generating means
Implementation Method 2
it is required to reduce concentration of an electric field at the peripheral region of the semiconductor wafer placed on the sample stage
Implementation Method 3
a susceptor ring made of a dielectric placed on the dielectric ring and covering the thin film electrode
Data Source
AI summary
A plasma processing apparatus includes a sample stage including a placement surface on which a semiconductor wafer is placed, a ring-shaped thin film electrode surrounding the sample stage, and a susceptor ring made of a dielectric covering the thin film electrode, in which the thin film electrode includes a first portion located lower than the rear surface of the semiconductor wafer, a second portion located higher than the main surface of the semiconductor wafer, and a third portion connecting the first portion and the second portion, and the first portion of the thin film electrode has an overlap region that overlaps the semiconductor wafer in a plan view.