Thin Film Encapsulation Apparatus for Curved Displays
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Solution Overview
Problem
Current methods for manufacturing thin film encapsulation layers in display apparatuses are inefficient and complex, particularly in forming multi-layered structures that require precise deposition of inorganic and organic layers, which affects the durability and longevity of curved display devices.
Innovation Solution
A thin film encapsulation layer manufacturing apparatus comprising a series of interconnected chambers for sputtering, monomer deposition, chemical vapor deposition, and atomic layer deposition, allowing for sequential formation of inorganic and organic layers through upward and downward deposition processes, with flip chambers for substrate inversion and efficient transfer between chambers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple separate deposition processes are used to form multi-layered encapsulation structures, then the encapsulation quality and durability are improved, but the manufacturing complexity and process time increase significantly
Solution Approach 1:
The patent combines multiple deposition chambers (sputtering, CVD, ALD) into a single integrated manufacturing system that can sequentially form inorganic and organic layers without removing the substrate. This merging of separate processes into one continuous operation reduces manufacturing complexity while maintaining the multi-layered encapsulation structure quality.
Solution Approach 2:
The manufacturing system is segmented into specialized chambers (sputtering chamber for inorganic layers, CVD chamber for organic layers, ALD chamber for precise thin layers), each optimized for specific deposition tasks. This segmentation allows complex multi-layer formation to be broken down into manageable sequential steps within a unified system.
2Reliability
If multiple separate deposition processes are used to form multi-layered encapsulation structures, then the encapsulation quality and durability are improved, but the manufacturing time and productivity are reduced
Solution Approach 1:
The substrate remains continuously transferred between chambers within the same manufacturing system without removal or repositioning. The sputtering chamber forms inorganic layers, then the substrate is sequentially transferred to CVD and ALD chambers for organic and additional inorganic layers, maintaining continuous productive action throughout the encapsulation process.
Solution Approach 2:
The substrate is pre-positioned and held in a transfer-ready state, allowing sequential chamber transfers to occur efficiently. The system prepares the substrate in advance for each deposition step, minimizing idle time and maximizing productivity while ensuring high-quality encapsulation.
3Manufacturing precision
If precise deposition of thin film layers is achieved through multiple processes, then the encapsulation precision and layer quality are improved, but the manufacturing cost and resource consumption increase
Solution Approach 1:
Different deposition parameters (temperature, pressure, gas flow rates, deposition rates) are optimized for each chamber type (sputtering, CVD, ALD) to achieve precise thin film formation. By adjusting these parameters within each specialized chamber, high-precision encapsulation layers are formed while minimizing material waste through controlled deposition rates and efficient material utilization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, increases productivity, and enhances the durability of display apparatuses by ensuring precise and efficient deposition of thin film encapsulation layers, thereby extending the lifespan of curved display devices.
Implementation Method 1
The sputtering chamber may be connected to the first transfer chamber, configured to receive the substrate from the first transfer chamber, and to form a first inorganic layer on the substrate by a sputtering process
Implementation Method 2
The monomer deposition chamber may be connected to the first transfer chamber and configured to receive the substrate from the transfer chamber, and to deposit a first organic layer on the first inorganic layer
Implementation Method 3
The chemical vapor deposition (CVD) chamber connected to the first transfer chamber, and configured to receive the substrate from the first transfer chamber, and to form a second inorganic layer on the first organic layer
Implementation Method 4
The atomic layer deposition (ALD) chamber may be connected to the first transfer chamber, and configured to receive the substrate from the first transfer chamber, and to form a third inorganic layer on the second inorganic layer
Data Source
AI summary
A thin film encapsulation layer manufacturing apparatus is provided that may include a transfer chamber, a sputtering chamber, a monomer deposition chamber, a chemical vapor deposition (CVD) chamber, and an atomic layer deposition (ALD) chamber. The transfer chamber may be connected to each of the other chambers, and may be configured to align a substrate. Each of the other chambers may be configured to receive from and transfer to the transfer chamber a substrate. The sputtering chamber may be configured to form a first inorganic layer on the substrate by a sputtering process. The monomer deposition chamber may be configured to deposit a first organic layer on the first inorganic layer. The CVD chamber may be configured to form a second inorganic layer on the first organic layer. The ALD chamber may be configured to form a third inorganic layer on the second inorganic layer.