Thin-Film Etching Cycles Without DI Water Rinse and Drying
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Solution Overview
Problem
The existing etching processes for thin films in semiconductor manufacturing are inefficient due to the inclusion of deionized water rinsing and drying processes, which complicate the process and increase overall time, reducing production efficiency.
Innovation Solution
A method involving a substrate processing apparatus that controls the rotation speed and temperature of the substrate during multiple cycles of puddling, etching, and rinsing operations using a chemical solution, with the substrate being rapidly heated by laser irradiation, and omitting DI water rinsing and drying operations to streamline the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If deionized water rinsing and drying processes are added between etching cycles, then etching uniformity is improved, but process time is greatly increased and production efficiency is reduced
Solution Approach 1:
The patent extracts and eliminates the deionized water rinsing and drying processes from the etching cycle, replacing them with a chemical solution-based rinsing method. This removal of unnecessary steps directly reduces process time while maintaining etching uniformity through the use of chemical solution that prevents substrate drying and maintains process continuity.
Solution Approach 2:
The patent introduces chemical solution as an intermediary substance to perform the rinsing function that was previously done with deionized water. The chemical solution serves as a mediator between etching cycles, preventing substrate drying and maintaining process conditions, thereby eliminating the need for separate drying steps and reducing overall process time.
2Reliability
If gas-blowing process is added to dry substrate after deionized water rinsing, then substrate drying is achieved, but process complexity and time are increased
Solution Approach 1:
The patent extracts and removes the gas-blowing drying process from the sequence of operations. By using chemical solution for rinsing instead of deionized water, the need for subsequent drying with gas is eliminated, thereby reducing process complexity while maintaining substrate readiness for the next etching cycle.
Solution Approach 2:
The patent maintains continuous useful action by using chemical solution that allows the substrate to remain in a process-ready state without requiring drying. The chemical solution prevents substrate drying issues while enabling direct transition to the next etching cycle, eliminating the need for intermediate drying steps and reducing process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the total process time by eliminating DI water rinsing and drying, simplifying operations, and maintaining high etching efficiency through repeated cycles of chemical solution application and rinsing, thereby enhancing production efficiency.
Implementation Method 1
a first etching operation of partially etching the thin film using the chemical solution on the substrate
Implementation Method 2
forming a first puddle of a chemical solution on a substrate by supplying and spreading the chemical solution on the substrate
Implementation Method 3
utilizing a substrate processing apparatus with controlled chemical solution dispensing and laser heating
Data Source
AI summary
A method of etching a thin film includes: a first puddling operation of forming a first puddle of a chemical solution on a substrate by supplying and spreading the chemical solution on the substrate on which a thin film is formed; a first etching operation of partially etching the thin film using the chemical solution on the substrate; a first rinsing operation of supplying the chemical solution onto the substrate to rinse off the first puddle of the chemical solution and apply the chemical solution onto the substrate; a second puddling operation of forming a second puddle of the chemical solution on the substrate; a second etching operation of partially etching the thin film; and a second rinsing operation of supplying the chemical solution onto the substrate to rinse off the second puddle of the chemical solution on the substrate and apply the chemical solution on to the substrate.