Thin Film Deposition Gas Flow Control
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Solution Overview
Problem
The high flow rates of reactive gases required to increase the concentrations of oxygen, nitrogen, and carbon in thin films like SiOC and SiCN films lead to increased film-forming costs, particularly when expensive gases are used.
Innovation Solution
A method involving a cycle of supplying source and reactive gases at varying flow rates within a process chamber, where the gas flow is managed to optimize pressure and exhaust conditions to reduce total gas consumption without compromising the concentrations of these elements in the thin films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the flow rates of reactive gases are increased to increase the concentrations of oxygen, nitrogen, and carbon in thin films, then the concentrations of these elements in the thin film are improved, but the total supply rate of reactive gases increases, thereby increasing film-forming costs
Solution Approach 1:
The patent applies periodic action by dividing the film formation process into alternating cycles: a first cycle supplies source gas at a first flow rate to form a base film, while a second cycle supplies reactive gas at a second flow rate (higher than the first) to modify the film and increase concentrations of oxygen, nitrogen, and carbon. This periodic switching between different gas supply rates allows the film to accumulate desired elements without requiring continuously high reactive gas flow rates, thereby reducing total gas consumption while achieving high element concentrations in the final film.
2Quantity of substance
If the flow rate of reactive gas is increased to enhance the concentration of elements in the thin film, then the film composition is improved, but the film-forming cost increases
Solution Approach 1:
The patent implements periodic action by alternating between a first film formation process using source gas at a first flow rate and a second film formation process using reactive gas at a second flow rate. This cyclic approach allows the film to be built efficiently at lower costs during the source gas phase, then enhanced with additional elements during the reactive gas phase. The result is a cost-effective method that achieves high element concentrations without requiring expensive continuous high-flow reactive gas supply.
Solution Approach 2:
The patent applies parameter changes by dynamically adjusting the flow rate parameter of the gas supply system. During the first cycle, the source gas is supplied at a first flow rate, and during the second cycle, the reactive gas is supplied at a second flow rate that is higher than the first. This controlled variation in flow rate parameters enables optimization of both film composition and manufacturing cost by matching gas supply intensity to the specific requirements of each film formation stage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the total supply rate of reactive gases, thereby lowering film-forming costs while maintaining the desired concentrations of oxygen, nitrogen, and carbon in the thin films.
Implementation Method 1
forming a thin film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a source gas to the substrate in a process chamber; and (b) supplying a reactive gas to the substrate in the process chamber
Data Source
AI summary
A method includes: forming a thin film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a source gas to the substrate in a process chamber; and (b) supplying a reactive gas to the substrate in the process chamber, wherein at least one of (a) and (b) includes: (c) supplying the source gas or the reactive gas at a first flow rate with exhaust of an inside of the process chamber being suspended until an inner pressure of the process chamber reaches a predetermined pressure; and (d) supplying the source gas or the reactive gas at a second flow rate less than the first flow rate with exhaust of the inside of the process chamber being performed while maintaining the inner pressure of the process chamber at the predetermined pressure after the inner pressure of the process chamber reaches the predetermined pressure.