Thin-Film Etching with Halogen Modifier for Atomic Layer Control
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Solution Overview
Problem
Conventional etching technologies struggle with controlling the etching rate and thickness of thin films, leading to damage and degradation of device characteristics due to uncontrolled reactivity and diffusion of fluorine atoms, especially in atomic layer etching methods.
Innovation Solution
A method involving the use of a halogen group-containing modifier and an etching activator to adsorb and react with thin films, followed by purging, to achieve precise and uniform etching at the atomic layer level.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If hydrogen fluoride is used for atomic layer etching, then strong reactivity is achieved, but etching rate control becomes difficult and device characteristics degrade due to fluorine atom diffusion
Solution Approach 1:
The patent introduces a modifier as an intermediary substance that reacts with the thin film to form a modified surface layer, which then reacts with the etching activator. This intermediary step allows controlled etching without the uncontrolled diffusion problems of direct fluorine atom reaction, resolving the contradiction between reactivity and etching rate control.
Solution Approach 2:
The patent changes the chemical parameters by using a modifier containing chlorine or fluorine atoms that adsorb onto the thin film surface, creating a controlled intermediate state. This parameter change enables precise control of etching rate while maintaining high reactivity, as the modifier's reaction kinetics can be tuned independently from the final etching step.
2Productivity
If fluorine atoms are used for etching, then etching capability is achieved, but damage and degradation occur in undesired areas due to atom diffusion
Solution Approach 1:
The modifier acts as a spatially selective intermediary that first adsorbs onto the thin film in desired etching areas, creating a protected modified layer. The etching activator then only etches where the modifier is present, preventing diffusion-related damage to undesired areas while maintaining etching capability in targeted regions.
Solution Approach 2:
The patent applies local quality by having the modifier adsorb selectively onto specific regions of the thin film surface, creating locally modified areas with different chemical properties. This ensures etching occurs only in desired locations with precise spatial control, eliminating the harmful diffusion effects in undesired areas.
3Productivity
If high temperature is used for removing modified surface layer, then removal efficiency is improved, but underlying film characteristics degrade
Solution Approach 1:
The patent changes the temperature parameter by conducting the etching process at lower temperatures compared to conventional high-temperature methods. The modified surface layer reacts with the etching activator at these lower temperatures, maintaining removal efficiency while protecting the underlying film from thermal degradation.
Solution Approach 2:
The patent replaces the thermal energy mechanism with a chemical reaction mechanism. Instead of relying on high temperature to drive the etching reaction, the modified surface layer chemically reacts with the etching activator at lower temperatures, substituting thermal driving force with chemical reactivity to achieve the same removal efficiency without thermal damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for controlled etching rates and thicknesses, maintaining film characteristics without impurities, enabling precise removal of thin films.
Implementation Method 1
supplying a modifier containing a halogen group to the inside of a chamber where a substrate is placed to adsorb the modifier onto a thin film formed on the substrate
Implementation Method 2
supplying an etching activator to the inside of the chamber to react with the adsorbed modifier and treat the thin film
Data Source
AI summary
Disclosed is a method of a method of treating thin films, the method comprising supplying a modifier containing a halogen group to the inside of a chamber where a substrate is placed to adsorb the modifier onto a thin film formed on the substrate; purging the inside of the chamber; supplying an etching activator to the inside of the chamber to react with the adsorbed modifier and treat the thin film; and purging the inside of the chamber.