Thin-Film IC Redistribution Layer Using Mixed Patterning Techniques

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Solution Overview

Problem

The complexity and cost of manufacturing thin-film integrated circuits (ICs) are high due to the use of single, high-precision patterning techniques like photolithography, which increases process duration and generates waste.

Innovation Solution

A method is proposed that combines different fabrication techniques for patterning and deposition in the manufacture of thin-film ICs, allowing for the use of lower precision techniques for features that do not require high precision, thereby reducing complexity and cost.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photolithographic patterning is used for all features, then manufacturing precision is improved, but device complexity and manufacturing cost increase

Engineering Contradiction:
Improvefeature size precisionVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies different patterning techniques to different regions of the IC based on local precision requirements. High-precision photolithography is used only for critical features requiring small minimum feature sizes, while lower-precision techniques are used for non-critical features, thereby reducing overall process complexity while maintaining necessary precision where required.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The fabrication process is segmented into different stages with different patterning techniques. The first fabrication technique (photolithographic) handles critical high-precision layers, while the second fabrication technique handles less critical layers, allowing each segment to be optimized independently for its specific precision requirements.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If photolithographic patterning is used for all features, then manufacturing precision is improved, but manufacturing duration increases

Engineering Contradiction:
Improvefeature size precisionVSAvoidmanufacturing duration
Core Design Contradiction:
Manufacturing precisionVSDuration of action of moving object

Solution Approach 1:

The patent applies different patterning techniques to different regions of the IC based on local precision requirements. High-precision photolithography is used only for critical features requiring small minimum feature sizes, while lower-precision techniques are used for non-critical features, thereby reducing overall process complexity while maintaining necessary precision where required.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The fabrication process is segmented into different stages with different patterning techniques. The first fabrication technique (photolithographic) handles critical high-precision layers, while the second fabrication technique handles less critical layers, allowing each segment to be optimized independently for its specific precision requirements.

Inventive Principle:
Principle #1Segmentation

3Manufacturing precision

If photolithographic patterning is used for all features, then manufacturing precision is improved, but manufacturing cost increases

Engineering Contradiction:
Improvefeature size precisionVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent applies different patterning techniques to different regions of the IC based on local precision requirements. High-precision photolithography is used only for critical features requiring small minimum feature sizes, while lower-precision techniques are used for non-critical features, thereby reducing overall process complexity while maintaining necessary precision where required.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The fabrication process is segmented into different stages with different patterning techniques. The first fabrication technique (photolithographic) handles critical high-precision layers, while the second fabrication technique handles less critical layers, allowing each segment to be optimized independently for its specific precision requirements.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces the complexity, duration, and cost of manufacturing thin-film ICs while maintaining functionality and reliability by leveraging the benefits of various patterning techniques and avoiding their disadvantages.

Implementation Method 1

forming, using a second fabrication technique, a conductive layer on the plurality of electronic components to form a redistribution layer, RDL

Methodology Applied
Scientific EffectDeposition: Deposition (physical)

Implementation Method 2

the second fabrication technique includes laser ablation

Methodology Applied
Scientific EffectLaser ablation: Laser Ablation

Data Source

PatentUS12347800B2Method of fabricating a conductive layer on an IC using non-lithographic fabrication techniques
Publication Date: 2025.07.01 PRAGMATIC SEMICON LTD
  • US12347800B2 patent drawing
  • US12347800B2 patent drawing
  • US12347800B2 patent drawing

AI summary

A method for fabricating a thin-film integrated circuit, IC, including a plurality of electronic components, the method comprising: forming, using a first fabrication technique, the plurality of electronic components, and forming, using a second fabrication technique, a conductive layer on the plurality of electronic components to form a redistribution layer, RDL, wherein the first fabrication technique includes photolithographic patterning, and the first fabrication technique is different to the second fabrication technique.