Thin-Film Substrate Processing for Deep Impurity Removal
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Solution Overview
Problem
Current substrate processing methods are ineffective in removing impurities from within thin films, particularly in three-dimensional devices with high aspect ratios, leading to degraded film characteristics and device performance.
Innovation Solution
A processing method involving repeated pressurization and depressurization cycles within a chamber, using gases like hydrogen to react with and remove impurities, followed by maintaining pressures to facilitate thorough impurity removal and recrystallization, thereby improving thin film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If film deposition temperature is lowered or sources with higher impurity contents are used to satisfy step coverage standard, then step coverage is improved, but impurity removal becomes more difficult
Solution Approach 1:
The patent applies preliminary action by performing pressure changing treatment before final film formation or between sequential film deposition steps. This pre-treatment modifies the substrate surface and existing film structure to facilitate subsequent impurity removal and improve final film quality, addressing the contradiction by preparing the system in advance rather than attempting removal after impurities are embedded
Solution Approach 2:
The patent employs periodic action through repeated cycles of pressure changing treatment, where the chamber pressure is alternately increased and decreased multiple times. This periodic pressure variation creates dynamic conditions that enhance impurity removal effectiveness while maintaining step coverage, resolving the contradiction by using time-dependent cyclic processes rather than static conditions
2Manufacturing precision
If conventional preprocessing is applied to substrate surface, then surface incompleteness is reduced, but impurities inside thin film cannot be effectively removed
Solution Approach 1:
The patent transitions from two-dimensional surface preprocessing to three-dimensional volume treatment by applying pressure changing cycles that penetrate through the entire thin film thickness. This dimensional extension allows impurities throughout the film bulk to be addressed, not just those at the surface, resolving the contradiction between surface treatment effectiveness and bulk impurity removal
3Length of stationary object
If thin film thickness is reduced for miniaturized elements, then device size is reduced, but incompleteness and impurity effects are amplified
Solution Approach 1:
The patent applies parameter changes by systematically varying pressure conditions during and after thin film formation. These parameter modifications create optimal conditions for complete film deposition and subsequent impurity removal, ensuring high manufacturing precision even when film thickness is reduced for miniaturized devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces impurity concentrations, enhances thin film resistivity, and improves voltage resistance characteristics, particularly in high-tech semiconductor products, by promoting recrystallization and uniform annealing across deep surfaces.
Implementation Method 1
it becomes an extremely important issue to remove impurities such as chlorine (Cl) from inside a thin film by using a chemical reaction or the like
Implementation Method 2
when a pressure inside a chamber is increased and then decreased, incompleteness of a substrate surface or a thin film surface may be removed
Implementation Method 3
A processing method involving repeated pressurization and depressurization cycles within a chamber, using gases like hydrogen to react with and remove impurities, followed by maintaining pressures to facilitate thorough impurity removal and recrystallization
Data Source
AI summary
The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.