Thin Film Patterning via Solvent Annealing and Photoexcitation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional methods for patterning thin films, such as photoresist etching, reactive ion etching, and nanoimprint lithography, are complex, costly, and environmentally unfriendly, and require etching solutions, making them unsuitable for mass production and environmentally unsustainable.
Innovation Solution
A method involving a thin film with conjugated molecules, where a mask is used to control the illumination and solvent annealing, allowing the molecules to reach an excited state and change thickness, forming patterns without the need for etching solutions, using a simpler process that enhances production efficiency and reduces environmental impact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photoresist etching method is used, then patterns can be formed on thin film, but the process becomes complex with numerous steps and requires etching solutions that pollute the environment
Solution Approach 1:
The patent extracts and eliminates the etching solution step from the conventional photoresist etching process. Instead of using chemical etching solutions that pollute the environment, the invention uses a mask layer that directly blocks light to form patterns through photolysis of the thin film material itself, removing the need for harmful chemical agents while maintaining pattern formation capability
Solution Approach 2:
The mask layer serves multiple functions: it acts as a light-blocking pattern definition layer, a protective layer during processing, and the pattern transfer medium itself. The thin film material serves dual purposes as both the functional layer and the etchable material, eliminating the need for separate photoresist and etch target layers, thereby simplifying the overall process
2Manufacturing precision
If reactive ion etching or nanoimprint lithography is used, then patterns can be formed, but the methods require extremely clean operating environment and high technical difficulty
Solution Approach 1:
The thin film material undergoes photolysis directly when exposed to light through the mask, forming patterns through self-etching without requiring external etching chemicals or complex processing equipment. The material itself provides the etching function through light-induced decomposition, eliminating the need for cleanroom environments and highly specialized equipment
Solution Approach 2:
The patent replaces complex mechanical and chemical etching systems (reactive ion etching equipment, nanoimprint lithography tools) with a simple optical system. A light source and mask are used to directly pattern the thin film through photolysis, substituting complicated mechanical/chemical processes with a straightforward optical approach that is easier to manufacture and implement
3Manufacturing precision
If conventional photoresist etching method is used, then patterns can be formed, but the number of steps is numerous reducing production efficiency
Solution Approach 1:
The patent merges the photoresist coating, pattern definition, and etching steps into a single integrated process. The mask layer is applied and then light is shone through it to simultaneously define patterns and etch the thin film material through photolysis, combining multiple sequential operations into one step that maintains precision while dramatically improving productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces the number of steps, eliminates the need for etching solutions, lowers production costs, and increases efficiency, while maintaining precision to the level of single-digit nanometers, making it suitable for mass production and environmentally friendly.
Implementation Method 1
the thin film covered by the mask is illuminated with a light source under an atmosphere of a first solvent, and a wavelength range of the light source is correspondent to an energy enabling the first molecules to reach an excited state
Implementation Method 2
the thin film covered by the mask is illuminated with a light source under an atmosphere of a first solvent
Data Source
AI summary
A method of patterning a thin film includes steps as follows. The thin film is formed. The thin film includes a plurality of first molecules, and each of the first molecules has a conjugated structure. A mask is covered on the thin film. The mask includes at least one exposing area, and the exposing area is correspondent to an illuminated region of the thin film. A solvent annealing and illuminating step is conducted, wherein the thin film covered by the mask is illuminated with a light source under an atmosphere of a first solvent, and a wavelength range of the light source is correspondent to an energy enabling the first molecules to reach an excited state. Thus a thickness of the illuminated region of the thin film is increased or decreased so as to form a pattern on the thin film.