Thin-Film Resistor Layout for Compact High-Voltage Semiconductor Packages
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Solution Overview
Problem
Existing semiconductor devices for high-voltage monitoring, such as those in electric vehicles, face challenges in compact design and precise resistance ratio maintenance due to the use of discrete resistors, which occupy more space and have varying resistance values, making it difficult to achieve high precision in voltage detection.
Innovation Solution
A semiconductor device with a resistive element constructed as a single chip using thin-film resistive layers connected in series, mounted on a high-voltage die pad, and a semiconductor element on a low-voltage die pad, with insulation layers and conductive bonding materials to enhance dielectric withstand voltage and reduce space occupancy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If discrete resistors are used for voltage division, then the device can be manufactured with conventional techniques, but the device occupies more space and has lower measurement precision
Solution Approach 1:
Multiple discrete resistors are merged into a single integrated resistive element formed by thin-film resistive layers on a substrate. This integration maintains the voltage division function while reducing the overall device area and improving measurement precision through consistent resistance ratios.
Solution Approach 2:
The resistive element transitions from a planar arrangement of discrete resistors to a multi-layer thin-film structure. By stacking resistive layers in the thickness direction rather than arranging them laterally, the device achieves compactness while maintaining precise resistance ratios through controlled film deposition.
2Measurement precision
If discrete resistors are used for voltage division, then the device structure remains simple, but the resistance ratio varies and precision is reduced
Solution Approach 1:
Multiple resistive functions are combined into a single integrated resistive element with multiple thin-film layers. This ensures consistent resistance ratios are maintained throughout the device while the overall structure remains manageable through systematic layer formation.
Solution Approach 2:
The resistance values are precisely controlled by changing the physical parameters of the thin-film layers during deposition, such as film thickness, material composition, and layer configuration. This allows precise resistance ratios to be achieved through manufacturing parameter control rather than post-assembly adjustment.
3Area of stationary object
If a single chip resistive element is used, then the device size is reduced and precision is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The device achieves compactness by transitioning to a multi-layer thin-film structure where resistive elements are stacked in the thickness direction. This vertical integration reduces lateral device size while the thin-film deposition process is a well-established manufacturing technique.
Solution Approach 2:
Precise resistance values are achieved by controlling deposition parameters such as film thickness and material composition during the thin-film formation process. These parameter changes are implemented through standard semiconductor manufacturing processes, maintaining ease of manufacture while achieving high precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for a more compact design with precise resistance ratio maintenance, improved dielectric withstand voltage, and efficient voltage detection, reducing the size and complexity of the semiconductor device while maintaining high precision.
Implementation Method 1
a resistive element (20) including a substrate (30), insulation layers (31) formed on the substrate (30), and thin-film resistive layers (32) formed on the insulation layers (31)
Implementation Method 2
insulation layers (31) formed on the substrate (30)
Data Source
AI summary
This semiconductor device is provided with: a high-voltage die pad and a low-voltage die pad, which are insulated from each other; a resistive element which is mounted on the high-voltage die pad; and a semiconductor element which is mounted on the low-voltage die pad. The resistive element is provided with: a substrate which is mounted on the high-voltage die pad; an insulating layer which is formed on the substrate; and a thin film resistive layer which is formed on the insulating layer.