Thin-Film Layer Detachment via Sacrificial Release

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Thin wafers with thicknesses less than 100 μm are difficult to handle using standard tools, and standard processing steps often damage very thin and fragile structures.

Innovation Solution

A method involving a carrier substrate with a layer stack comprising a carrier layer and a sacrificial layer, where the sacrificial layer has exposed areas, allowing for the deposition of a thin-film layer that is detached from the carrier layer by removing the sacrificial layer, using a transfer carrier layer to adhere and lift off the thin-film layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If standard tools and processing steps are used to handle thin wafers, then handling and processing can be performed using conventional methods, but very thin and fragile structures are damaged

Engineering Contradiction:
Improvehandling easeVSAvoidstructure integrity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

A sacrificial layer is introduced as an intermediary between the thin-film layer and the carrier substrate. This sacrificial layer enables the thin-film layer to be handled and processed using standard tools while protecting it from damage, as the sacrificial layer absorbs the mechanical stress during handling. The thin-film layer is deposited on the sacrificial layer which is itself on the carrier substrate, creating a protective intermediary structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The structure is segmented into distinct functional layers: a carrier substrate for mechanical support, a sacrificial layer for protection during processing, and a thin-film layer for the final application. This segmentation allows each layer to perform its specific function optimally - the carrier substrate provides handling ease while the sacrificial layer protects the fragile thin-film layer.

Inventive Principle:
Principle #1Segmentation

2Device complexity

If the thin-film layer is deposited on the carrier substrate directly, then the production process is simplified, but the thin-film layer cannot be detached without applying mechanical force

Engineering Contradiction:
Improveprocess complexityVSAvoiddetachment ease
Core Design Contradiction:
Device complexityVSEase of operation

Solution Approach 1:

The sacrificial layer serves as a mediator that enables easy detachment of the thin-film layer. By depositing the thin-film layer on the sacrificial layer rather than directly on the carrier substrate, the sacrificial layer acts as a release agent that can be selectively removed, allowing the thin-film layer to be detached without applying mechanical force that would damage it.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The sacrificial layer is intentionally designed to be discarded (removed) after serving its protective function during deposition and handling. Its removal enables the clean detachment of the thin-film layer from the carrier substrate without mechanical force, and the sacrificial layer material can be recovered or disposed of as waste.

Inventive Principle:
Principle #34Discarding and recovering

3Ease of operation

If the sacrificial layer is completely removed, then the thin-film layer can be fully detached, but the carrier layer is exposed and requires additional processing

Engineering Contradiction:
Improvedetachment completenessVSAvoidprocessing complexity
Core Design Contradiction:
Ease of operationVSEase of manufacture

Solution Approach 1:

The sacrificial layer is removed selectively in specific areas rather than completely, creating local exposure of the carrier layer only where needed. This local quality approach allows the thin-film layer to be detached from non-critical areas while maintaining the carrier layer coverage in areas where structural support or electrical connection is needed, reducing additional processing requirements.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

Instead of completely removing the sacrificial layer, partial removal is performed - just enough to enable detachment of the thin-film layer from areas where it is not needed. This partial action avoids the excessive processing that would be required to restore or reconfigure the fully exposed carrier layer, optimizing the balance between detachment completeness and processing complexity.

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the production of thin-film layers with thicknesses as low as 5 μm without mechanical force, reducing damage to fragile structures and allowing for the detachment of thin-film layers from carrier wafers without applying force.

Implementation Method 1

providing an at least single-sided-adhesive transfer carrier layer on the thin-film layer such that the thin-film layer adheres to the adhesion layer

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentUS11414320B2Methods for producing thin-film layers and microsystems having thin-film layers
Publication Date: 2022.08.16 INFINEON TECHNOLOGIES AG
  • US11414320B2 patent drawing
  • US11414320B2 patent drawing
  • US11414320B2 patent drawing

AI summary

A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.