Thin Film Etching Sequence for Selective Adsorption Control
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Solution Overview
Problem
Conventional etching technologies face challenges in achieving high precision and uniform etching of thin films with materials that have lower reactivity than hydrogen fluoride, leading to contamination and difficulty in controlling the etching degree.
Innovation Solution
A method involving the use of a precursor, etching initiator, and reactant in a controlled chamber environment, with specific materials like Trimethyl orthoformate and O3, to control etching by exploiting surface energy differences for selective adsorption and etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If hydrogen fluoride is used for etching, then etching performance is improved, but penetration into undesired areas occurs causing contamination
Solution Approach 1:
The patent introduces a precursor material that adsorbs onto the substrate surface as an intermediary layer before etching. This precursor acts as a mediator that enables controlled etching while preventing direct contact between the etchant and undesired areas, thus maintaining high etching performance while reducing contamination
Solution Approach 2:
The patent applies different treatments to different areas: the precursor is selectively adsorbed onto specific regions of the substrate where etching is desired, creating local quality differences. This allows the etchant to act only where needed while protecting other areas from contamination
2Object-generated harmful factors
If materials with lower reactivity than hydrogen fluoride are used, then contamination is reduced, but etching rate becomes low making it difficult to control etching degree
Solution Approach 1:
The patent changes the parameters of the etching process by introducing a precursor adsorption step that modifies the surface properties. This allows using less reactive materials while achieving controlled etching rates through the precursor layer, thus reducing contamination while maintaining etching controllability
Solution Approach 2:
The patent performs preliminary adsorption of the precursor onto the substrate before the actual etching process. This preliminary action prepares the surface for controlled etching, enabling the use of lower reactivity materials while maintaining precise control over the etching degree
3Ease of manufacture
If conventional etching methods are used for miniaturized patterns, then existing process is maintained, but atomic-level precision is insufficient
Solution Approach 1:
The patent segments the etching process into distinct sequential steps: precursor adsorption, purging, etching initiator supply, and reactant supply. This segmentation allows each step to be optimized independently, maintaining process simplicity while achieving atomic-level precision through controlled sequential reactions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves etching selectivity and reduces contamination by accurately controlling the etching process, enhancing precision and uniformity in thin film treatment.
Implementation Method 1
supplying a precursor to the inside of a chamber where a substrate is placed to adsorb the precursor onto the substrate
Implementation Method 2
supplying a reactant to the inside of the chamber
Data Source
AI summary
Disclosed is a method of treating thin films, the method comprising: supplying a precursor to the inside of a chamber where a substrate is placed to adsorb the precursor onto the substrate; purging the inside of the chamber; supplying an etching initiator to the inside of the chamber; purging the inside of the chamber; supplying a reactant to the inside of the chamber; and purging the inside of the chamber.