Thin Film Modification Composition for High-Temperature Step Coverage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing thin film deposition methods struggle to achieve 100% step coverage and thickness uniformity on complex semiconductor substrates, particularly at high temperatures, leading to difficulties in maintaining electrical characteristics and increasing impurity levels.
Innovation Solution
A thin film modification composition comprising a step coverage improver and a diffusion improver, which includes compounds with specific chemical structures, is used to shield the substrate surface and control the reaction speed, reducing the thin film growth rate and improving uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If deposition temperature is increased to reduce impurities and improve film quality, then film quality and purity are improved, but thin film growth rate increases sharply making it difficult to achieve step coverage
Solution Approach 1:
A shielding agent is introduced as an intermediary substance that selectively adsorbs on substrate surfaces to modulate the deposition process. The shielding agent mediates between the high temperature conditions (which improve film quality) and the need for controlled growth rates (for step coverage), allowing both requirements to be satisfied simultaneously by controlling where and how the thin film forms.
Solution Approach 2:
The shielding agent creates local differences in adsorption properties across the substrate surface. By forming shielded areas with different adsorption characteristics, the deposition process is localized and controlled, enabling uniform thickness deposition in complex microstructures while maintaining high temperature processing benefits.
2Productivity
If conventional shielding agents are used to reduce growth rate at high temperature, then some growth control is achieved, but growth rate still increases by about 10% at 300°C making step coverage difficult above 360°C
Solution Approach 1:
The invention changes the chemical and physical parameters of the shielding agent to achieve better performance. Specifically, the shielding agent has a boiling point of 50-150°C and refractive index of 1.30-1.70, with specific molecular structures that enhance its adsorption characteristics. These parameter changes enable the shielding agent to maintain effective adsorption and growth control at high temperatures where conventional agents fail.
3Adaptability or versatility
If aspect ratio of microstructure increases to achieve higher integration, then device integration is improved, but step coverage and thickness uniformity become increasingly difficult to achieve
Solution Approach 1:
The shielding agent is applied to the substrate surface before the thin film deposition process begins. This preliminary action of adsorbing the shielding agent creates a pre-configured surface that guides subsequent film formation, ensuring uniform thickness distribution even in high aspect ratio structures where conventional approaches fail.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively improves step coverage and thickness uniformity, reduces impurities, and enhances film quality by controlling the deposition process, even on complex structures, thereby improving the electrical properties of semiconductor devices.
Implementation Method 1
by forming a deposition layer with a uniform thickness as a shielded area on a substrate due to the difference in adsorption distribution of the compound
Implementation Method 2
a method of forming a thin film using the thin film modification composition
Data Source
AI summary
The present invention relates to a thin film modification composition, a method of forming a thin film using the thin film modification composition, a semiconductor substrate including the thin film, and a semiconductor device including the semiconductor substrate. According to the present invention, by using a step coverage improver and a diffusion improver in combination, the reaction speed may be improved and the thin film growth rate may be appropriately reduced. Thus, even when forming a thin film on a substrate with a complex structure under high-temperature conditions, step coverage and the thickness uniformity of a thin film may be greatly improved, impurities may be reduced, and film quality may be improved.