Thin-Film Structural Body With 3D Junction Planes
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Solution Overview
Problem
Existing semiconductor devices, such as solar cells, face challenges in achieving high-efficiency energy conversion due to two-dimensionally formed p-n junctions, which limit their energy conversion efficiency and sensitivity, especially when using magnetic materials for phase-separated nanostructures.
Innovation Solution
A thin-film structural body with a phase-separated nanostructure is developed, featuring a three-dimensional junction plane formed by epitaxial growth of p-type and n-type semiconductor materials, allowing for increased contact area and stability during thermal loading, using materials like NiO and ZnO, and deposited via pulsed laser deposition to enhance crystallinity and orientation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If two-dimensionally formed p-n junctions are used in semiconductor devices, then the device structure is simple and easy to manufacture, but the energy conversion efficiency and sensitivity are limited
Solution Approach 1:
The patent transitions from two-dimensional planar p-n junctions to three-dimensional vertically stacked p-n junctions. Multiple p-type and n-type semiconductor layers are alternately stacked to form multiple p-n junctions in the vertical direction, thereby increasing the total junction area and improving energy conversion efficiency without significantly increasing lateral device footprint
Solution Approach 2:
The semiconductor structure is segmented into multiple discrete p-type and n-type layers stacked alternately. Each interface between adjacent p-type and n-type layers forms an independent p-n junction, creating multiple segmented junctions that collectively enhance the overall energy conversion capability of the device
2Reliability
If magnetic materials are used for phase-separated nanostructures, then unique magnetic properties are achieved, but stability during thermal loading deteriorates
Solution Approach 1:
The patent controls the composition parameters of the semiconductor materials, specifically using p-type materials with wide bandgaps (such as NiO, Cu2O, CuO, CoO) and n-type materials (such as ZnO, TiO2, Fe3O4, Fe2O3, MnO, and indium tin oxide). By optimizing the material composition and crystal structure parameters, the phase-separated nanostructure maintains stability under thermal loading conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in high-performance, reliable semiconductor devices with improved energy conversion efficiency and sensitivity, capable of maintaining stability under thermal conditions, suitable for high-efficiency energy conversion devices and sensitive sensors.
Implementation Method 1
deposited via pulsed laser deposition
Implementation Method 2
formed by epitaxial growth of p-type and n-type semiconductor materials
Data Source
AI summary
A structural body that includes a film that has a phase-separated nanostructure where a separate columnar shape phase is dispersed in a matrix phase that are phase-separated in a state of thermal equilibrium. The matrix phase is formed from any one of a p-type semiconductor material and an n-type semiconductor material, and the separate columnar shape phase is formed from the other semiconductor material. The film is formed on a substrate such that the separate columnar shaped phase and the matrix phase have three-dimensional junction planes.