Thin Fuse Semiconductor Structure for Redundancy Trimming
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Solution Overview
Problem
As integrated circuits become smaller and more complex, semiconductor components are easily influenced by defects or impurities, and existing fuse designs may not be easily blown out as needed, which complicates the process of trimming or replacing defective parts in redundancy circuits.
Innovation Solution
A semiconductor structure is developed with a thin fuse that can be easily formed without an extra mask, featuring a substrate with an isolation structure and gate electrodes, where the fuse is conformal with the isolation structure and has a thickness ranging from 100 angstroms to 850 angstroms, allowing for efficient blowing and reducing production costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional fuse design is used, then the fuse can be formed with standard thickness, but it is difficult to blow out as needed
Solution Approach 1:
The patent changes the thickness parameter of the fuse from conventional dimensions to a thin profile (100-850 angstroms). This parameter change makes the fuse easier to blow out while maintaining manufacturing feasibility through conformal deposition on the isolation structure.
Solution Approach 2:
The patent forms the fuse with non-uniform thickness by utilizing the vertical dimension - the fuse is conformal to the isolation structure which has varying height. This creates a fuse where the thickness varies along its length, with thinner sections that are easier to blow out.
2Manufacturing precision
If an extra mask is used to form a thin fuse, then the fuse thickness can be reduced, but the process cost increases
Solution Approach 1:
The isolation structure serves a dual purpose: it provides electrical isolation and simultaneously serves as the mold/form for the fuse. The conformal deposition process automatically creates the thin fuse profile by following the isolation structure's geometry, eliminating the need for separate masking steps to define fuse thickness.
Solution Approach 2:
The isolation structure performs multiple functions: electrical isolation between active regions and as the forming template for the fuse. This multi-functionality eliminates the need for dedicated fuse formation masks, reducing process complexity and cost.
Data Source
AI summary
Provided is a semiconductor structure including a substrate, an isolation structure, a fuse and two gate electrodes. The isolation structure is located in the substrate and defines active regions of the substrate. The fuse is disposed on the isolation structure. The gate electrodes are disposed on the active regions and connected to ends of the fuse. In an embodiment, a portion of a bottom surface of the fuse is lower than top surfaces of the active regions of the substrate.