Thin GaN Substrate Module for Lower Thermal Resistance
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Solution Overview
Problem
Current nitride semiconductor modules face challenges in heat dissipation due to the thickness of the semiconductor substrate, which affects the thermal resistance and the efficiency of heat dissipation, particularly when using GaN-based materials for high-frequency and high-power applications.
Innovation Solution
A nitride semiconductor module with a GaN substrate thickness of 100 μm or less is used, allowing for improved heat dissipation by reducing thermal resistance and enabling the formation of a shorter heat dissipation path, and the omission of a buffer layer facilitates epitaxial growth and further reduces thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the semiconductor substrate thickness is increased, then the mechanical strength and stability are improved, but the thermal resistance increases and heat dissipation efficiency deteriorates
Solution Approach 1:
The patent optimizes the substrate thickness to 100 μm or less, changing the dimensional parameter to achieve a balance between mechanical strength and thermal performance. This parameter optimization allows the substrate to maintain sufficient strength while reducing thermal resistance for effective heat dissipation in high-power applications.
2Manufacturing precision
If a buffer layer is added, then the epitaxial growth quality is improved, but the thermal resistance increases and heat dissipation path lengthens
Solution Approach 1:
The patent removes the buffer layer from the device structure, extracting this intermediate layer that was previously used for epitaxial growth. This elimination shortens the heat dissipation path and reduces thermal resistance, while the epitaxial growth quality is maintained through direct growth on the GaN substrate with optimized growth conditions.
3Temperature
If the substrate thickness is reduced to 100 μm or less, then the heat dissipation efficiency is improved, but the mechanical strength and stability may be compromised
Solution Approach 1:
The patent establishes a specific thickness parameter of 100 μm or less for the GaN substrate, optimizing this dimensional parameter to achieve superior heat dissipation efficiency while maintaining adequate mechanical strength through material property optimization and structural design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reduced substrate thickness and absence of a buffer layer enhance heat dissipation, increasing the upper limit of drain current and improving the thermal performance of the semiconductor module, making it suitable for high-frequency and high-power applications.
Implementation Method 1
the semiconductor substrate (12) is a GaN substrate having a thickness of 100 μm or less
Data Source
AI summary
A nitride semiconductor module includes a chip including at least one transistor, wherein the chip includes: a semiconductor substrate including a substrate upper surface and a substrate lower surface facing an opposite side of the substrate upper surface; an electron transit layer formed over the substrate upper surface of the semiconductor substrate and made of GaN; and an electron supply layer formed over the electron transit layer and made of GaN having a larger band gap than the electron transit layer, wherein the at least one transistor includes a gate electrode, a source electrode, and a drain electrode, which are formed over the electron supply layer, and wherein the semiconductor substrate is a GaN substrate having a thickness of 100 μm or less.