Thin Heat Sink Support Using E-Bar Substrates in Semiconductor Packages

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Solution Overview

Problem

The extension of heat sinks in semiconductor packages beyond three times the thickness of the horizontal portion leads to structural issues such as breakage and warpage, limiting their effectiveness in dissipating heat and contributing to premature failure.

Innovation Solution

The use of e-bar substrates to elevate the heat sink, reducing the need for vertical extensions and maintaining structural integrity by providing a vertical offset, thus minimizing the overall height and enhancing heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If the heat sink is extended vertically down to the HDI substrate for structural support, then the heat sink provides structural support, but the heat sink becomes subject to breakage, warpage, and premature failure due to excessive height

Engineering Contradiction:
Improvestructural supportVSAvoidheat sink durability
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The heat sink structure is divided into two separate components: a horizontal heat sink portion and a vertical support portion. This segmentation allows each component to be optimized independently - the horizontal portion can be kept thin and robust while the vertical support provides necessary structural elevation without compromising the heat sink's durability

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces an intermediary support structure (vertical support portion) that mediates between the heat sink and the HDI substrate. This intermediary provides the necessary structural support and elevation without requiring the heat sink itself to extend vertically, thus preventing breakage and warpage while maintaining structural integrity

Inventive Principle:
Principle #24Intermediary (Mediator)

2Length of stationary object

If the heat sink vertical extension length exceeds 3 times the thickness of the horizontal portion, then the heat sink reaches the HDI substrate for support, but the heat sink is subject to breakage and warpage

Engineering Contradiction:
Improveheat sink vertical extension lengthVSAvoidheat sink dimensional stability
Core Design Contradiction:
Length of stationary objectVSManufacturing precision

Solution Approach 1:

By segmenting the heat sink into horizontal and vertical portions, the patent eliminates the need for a long continuous vertical extension. The horizontal portion maintains its thin profile while the separate vertical support provides elevation, avoiding the dimensional instability associated with excessive vertical extension length

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from a vertical extension approach to a horizontal support approach. Instead of extending the heat sink vertically downward, the support function is achieved through a horizontal portion that extends laterally, fundamentally changing the dimensional approach to solving the support problem

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If the heat sink vertical extension is limited to 3 times the thickness of the horizontal portion, then the heat sink maintains structural integrity, but the heat sink cannot reach the HDI substrate for adequate support in tall semiconductor packages

Engineering Contradiction:
Improveheat sink structural integrityVSAvoidheat sink reach to substrate
Core Design Contradiction:
ReliabilityVSLength of stationary object

Solution Approach 1:

The heat sink system is segmented into a horizontal heat dissipation portion and a vertical support portion. This allows the horizontal portion to maintain its thin, structurally sound design while the vertical support portion independently provides the necessary reach to the HDI substrate, solving both structural integrity and support reach requirements

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A vertical support portion acts as an intermediary element that bridges the gap between the thin horizontal heat sink and the HDI substrate. This intermediary provides the necessary vertical reach and structural support without compromising the horizontal heat sink's integrity or requiring it to be thickened

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

E-bar substrates support the heat sink, reducing defects and ensuring effective heat dissipation while maintaining robustness, addressing the limitations of conventional heat sink designs.

Implementation Method 1

improving heat dissipation... E-bar substrates support the heat sink, reducing defects and ensuring effective heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS12431405B2Semiconductor device and method of forming thin heat sink using e-bar substrate
Publication Date: 2025.09.30 STATS CHIPPAC LTD
  • US12431405B2 patent drawing
  • US12431405B2 patent drawing
  • US12431405B2 patent drawing

AI summary

A semiconductor device has a substrate and a semiconductor package disposed over the substrate. An embedded bar (e-bar) substrate is disposed on the substrate around the semiconductor package. A heat sink is formed over the semiconductor package and supported by the e-bar substrate to elevate the heat sink from the substrate and reduce a thickness of the heat sink. A thermal interface material is deposited between the semiconductor package and heat sink. Alternatively, a shield layer can be formed over the semiconductor package and supported by the e-bar substrate. The e-bar substrate has a base layer and a first metal layer formed over a first surface of the base layer. A bump is formed over the first metal layer. A second metal layer can be over a second surface of the base layer opposite the first surface of the base layer. Two or more e-bar substrates can be stacked.