Thin-Oxide MOSFET Level Shifter for Static Leakage Control

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Circuit nodes are transitioning to low-oxide devices, necessitating level shifters that can accommodate these devices, as existing level shifters designed for thick-oxide devices are inadequate.

Innovation Solution

A level shifter utilizing a regenerative feedback loop formed by thin-oxide Metal Oxide-Semiconductor Field Effect Transistors (MOSFETs) to convert high voltage signals to lower voltage levels, ensuring reliable operation and incorporating a VCCA collapse detector to prevent static leakage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If thick-oxide devices are used in level shifters, then reliability is improved, but compatibility with low-oxide circuit nodes is lost

Engineering Contradiction:

Improvedevice reliabilityVSAvoidcompatibility with circuit nodes

Core Design Contradiction:

ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent changes the oxide thickness parameter of the MOSFETs from thick-oxide to thin-oxide to match the circuit node technology node. This parameter change enables compatibility with low-oxide circuit nodes while maintaining reliability through the regenerative feedback loop design that ensures proper voltage level translation and prevents static leakage.

Inventive Principle:

Principle #35Parameter changes

2Adaptability or versatility

If thin-oxide devices are used in level shifters, then compatibility with low-oxide circuit nodes is improved, but risk of static leakage increases

Engineering Contradiction:

Improvecompatibility with circuit nodesVSAvoidstatic leakage

Core Design Contradiction:

Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

The patent implements a regenerative feedback loop using thin-oxide MOSFETs that continuously monitors and adjusts the voltage levels. This feedback mechanism ensures that voltage transitions are properly controlled and prevents static leakage by maintaining safe operating conditions, thereby enabling the use of thin-oxide devices compatible with low-oxide circuit nodes.

Inventive Principle:

Principle #23Feedback

3Device complexity

If conventional level shifters are used, then design simplicity is maintained, but functionality with multiple voltage levels is limited

Engineering Contradiction:

Improvedesign simplicityVSAvoidvoltage level compatibility

Core Design Contradiction:

Device complexityVSAdaptability or versatility

Solution Approach 1:

The patent designs a universal level shifter using thin-oxide MOSFETs with regenerative feedback that can operate across multiple voltage levels and interface with different circuit node technologies. This multi-functional design maintains relative simplicity while significantly improving adaptability to various voltage level requirements and circuit node compatibilities.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250266834A1High voltage to low voltage level shifter utilizing thin-oxide devices

Publication Date: 2025.08.21 QUALCOMM INC

AI summary

An apparatus, including: an input node to receive a signal at a pre-defined voltage; an output node; and a plurality of thin-oxide Metal Oxide-Semiconductor Field Effect Transistors (MOSFETs) coupled to the input node and to the output node, the plurality of thin-oxide MOSFETs configured to form a regenerative feedback loop to reduce the signal at the pre-defined voltage to a lower level voltage, wherein the signal at the lower level voltage is outputted through the output node.