Dual-Side Metallized Thin Semiconductor Package for Reliable Contact
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Solution Overview
Problem
Existing semiconductor package fabrication processes are complex and inefficient, particularly in minimizing package size while ensuring effective electrical contact and structural integrity.
Innovation Solution
The implementation of a thinned semiconductor package with a dual side metallization structure, including a die with a first and second side, a first metal layer coupled to the first side, a tin layer coupled to the first metal layer, a backside metal layer coupled to the second side, and a mold compound covering the die and metal layers, which facilitates the formation of bumps and supports the thinning process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the overall size of the semiconductor package is minimized, then economic benefits and technological benefits are improved, but the complexity of ensuring effective electrical contact and structural integrity increases
Solution Approach 1:
The patent applies segmentation by dividing the metallization structure into distinct layers (first metal layer, tin layer, backside metal layer) and separating the molding process into stages (applying mold compound, thinning, exposing bumps). This segmentation allows each layer and process step to be optimized independently, enabling miniaturization while maintaining electrical contact effectiveness and structural integrity.
Solution Approach 2:
The patent transitions from planar metallization to a multi-layer vertical structure. By stacking metal layers and tin layers in the vertical dimension, the package achieves compact horizontal footprint while maintaining adequate electrical contact area and structural strength through the layered architecture.
2Volume of moving object
If the package is thinned to reduce size, then volume is reduced, but structural support and electrical contact reliability may deteriorate
Solution Approach 1:
The patent employs composite materials by combining multiple metal layers (copper, aluminum, tin) with the mold compound. This composite structure provides both mechanical support and electrical functionality, allowing the package to be thinned while maintaining strength through the synergistic properties of the layered composite architecture.
Solution Approach 2:
The patent applies preliminary action by forming the complete multi-layer metallization structure and applying the mold compound before the thinning process. This preliminary structuring ensures that structural support and electrical contact pathways are established prior to reduction, preventing deterioration during and after thinning.
3Reliability
If multiple metal layers are added to ensure effective electrical contact, then electrical contact is improved, but device complexity increases
Solution Approach 1:
The patent resolves the complexity issue by organizing multiple metal layers in the vertical dimension rather than expanding horizontally. The first metal layer, tin layer, and backside metal layer are stacked to achieve effective electrical contact while maintaining a compact overall structure that does not excessively increase device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the efficient formation of thin semiconductor packages with improved electrical contact and structural support, reducing the overall package size while maintaining economic and technological benefits.
Implementation Method 1
a mold compound coupled to the die. The mold compound may cover a plurality of sidewalls of the first metal layer and a plurality of sidewalls of the tin layer
Implementation Method 2
a first metal layer coupled to the first side of the die, a tin layer coupled to the first metal layer, the first metal layer between the die and the tin layer, a backside metal layer coupled to the second side of the die
Data Source
AI summary
Implementations of semiconductor packages may include a die having a first side and a second side opposite the first side, a first metal layer coupled to the first side of the die, a tin layer coupled to the first metal layer, the first metal layer between the die and the tin layer, a backside metal layer coupled to the second side of the die, and a mold compound coupled to the die. The mold compound may cover a plurality of sidewalls of the first metal layer and a plurality of sidewalls of the tin layer and a surface of the mold compound is coplanar with a surface of the tin layer.