Thin Semiconductor Element Transfer With Atomic Diffusion Bonding
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Solution Overview
Problem
Conventional methods for thinning semiconductor elements to 10 μm or less result in decreased strength, leading to defects such as cracks, breakage, or film detachment during polishing and substrate detachment, increasing defect rates.
Innovation Solution
A method involving the formation of an electrode protection layer on a circuit element substrate, followed by atomic diffusion joining with a support substrate using a metal thin film, polishing to expose the circuit element, and attaching a transfer substrate, while detaching the support substrate, to enhance mechanical strength and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the semiconductor substrate is wholly removed to thin the circuit element to 10 μm or less, then the thickness of the semiconductor element is reduced, but the strength of the semiconductor element decreases and defects such as cracks, breakage, or film detachment occur
Solution Approach 1:
An electrode protection layer is formed on the circuit element before substrate removal, and the circuit element is bonded to a support substrate in advance. These preliminary actions provide mechanical support and protection during the thinning process, preventing defects while enabling the substrate to be wholly removed to achieve thin semiconductor elements with thickness of 10 μm or less
Solution Approach 2:
The electrode protection layer acts as an intermediary that protects the circuit element during substrate removal. This protection layer is formed by applying a resin composition and heating it, creating a protective barrier that prevents cracks, breakage, and film detachment while the semiconductor substrate is being removed
2Quantity of substance
If the semiconductor substrate is wholly removed to achieve thin semiconductor elements, then the element density can be increased, but the defect rate increases due to cracks, breakage, or film detachment
Solution Approach 1:
The circuit element is bonded to a support substrate and an electrode protection layer is formed before substrate removal. These preliminary actions ensure mechanical support and protection throughout the thinning process, enabling high element density to be achieved while maintaining low defect rates
Solution Approach 2:
The electrode protection layer serves as a protective intermediary during the substrate removal process, preventing defects that would otherwise occur when achieving the thin dimensions necessary for high element density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method produces a thin semiconductor element with reduced defects like cracks, breakage, or detachment, maintaining strength and enabling low defect rates even during polishing and substrate removal.
Implementation Method 1
forming a metal thin film on an electrode protection layer of the circuit element substrate and a support substrate in vacuum; attaching the metal thin film of the circuit element substrate and the metal thin film of the support substrate by an atomic diffusion joining method
Implementation Method 2
removing the semiconductor substrate by polishing to expose the circuit element
Data Source
AI summary
It is an object of the present disclosure to provide a method of manufacturing a thin semiconductor element having a low defect rate. A method of manufacturing a semiconductor element according to the present disclosure includes: forming a metal thin film on an electrode protection layer of a circuit element substrate and a support substrate in vacuum; attaching the metal thin film of the circuit element substrate and the metal thin film of the support substrate by an atomic diffusion joining method; removing a semiconductor substrate by polishing to expose a circuit element; joining a transfer substrate to an exposed surface of the circuit element; and detaching the support substrate from the circuit element after joining the transfer substrate.