Thin-Si Passive Structure for Tip-to-Tip Shorting Mitigation
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Solution Overview
Problem
Nanosheet technology faces interference issues as devices scale down, requiring a thicker bulk material for passive devices, which leads to tip-to-tip shorting problems when integrated with logic devices.
Innovation Solution
A microelectronic structure with a passive device featuring a thinner doped substrate, a silicide layer, and a conductive metal plane on the backside surface, reducing the overall thickness and enhancing current flow, allowing for smaller backside contacts and mitigating shorting issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a larger amount/thickness of bulk material is used for forming passive devices, then the passive device can be formed properly, but the overall device thickness increases causing tip-to-tip shorting problems
Solution Approach 1:
The substrate is segmented into two distinct parts: a thin passive device substrate (20-50 nm) and a separate bulk substrate. The thin substrate is sufficient for passive device formation, while the bulk substrate provides additional material where needed, eliminating tip-to-tip shorting problems caused by excessive thickness.
Solution Approach 2:
Different substrate thicknesses are applied to different functional regions: the passive device region uses a thin substrate (20-50 nm) to prevent shorting, while the logic device region maintains a thicker bulk substrate for proper device formation. This localized quality optimization resolves the contradiction between reliability and thickness.
2Length of stationary object
If the substrate thickness is reduced to prevent tip-to-tip shorting, then device integration is improved, but current flow through the substrate may be insufficient
Solution Approach 1:
The substrate structure uses a composite of doped semiconductor material with optimized doping concentrations. The thin substrate (20-50 nm) is heavily doped to compensate for the reduced thickness, maintaining sufficient current flow while preventing tip-to-tip shorting. The composite doping profile ensures both electrical performance and dimensional constraints are met.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces the thickness of the passive device substrate to 20-50 nm, improving current flow and reducing the height of backside contacts, thus preventing tip-to-tip shorting and enabling more efficient integration with logic devices.
Implementation Method 1
enhancing current flow, allowing for smaller backside contacts and mitigating shorting issues
Data Source
AI summary
A microelectronic structure including a logic device and a passive device. The passive device includes a doped substrate, a silicide layer located on a backside surface of the doped substrate, and a metal plane located on a backside surface of the silicide layer.