Thin Semiconductor Substrate Processing Without Carrier Support
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Solution Overview
Problem
Semiconductor substrates thinner than standard thicknesses face mechanical strength issues during fabrication, leading to defects like wafer deflection, cracking, and breakage when processed without a carrier or support, as they lack sufficient mechanical strength to withstand handling and processing steps.
Innovation Solution
The method involves providing semiconductor substrates with specific thickness ranges (e.g., 70-500 microns, 100-575 microns, 120-600 microns) that are not coupled with a carrier or support, allowing them to maintain mechanical strength for processing through semiconductor device fabrication processes, using techniques like backgrinding and singulation to achieve desired thicknesses, and utilizing substrates like silicon carbide which exhibit higher mechanical strength than silicon.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor substrates are made thinner to reduce device size and improve integration, then productivity and device density are improved, but mechanical strength deteriorates leading to wafer deflection, cracking, and breakage during fabrication
Solution Approach 1:
The patent applies parameter changes by transitioning from traditional thick substrates (e.g., 725 microns for 12-inch wafers) to thinned substrates (e.g., 200 microns or less), fundamentally changing the thickness parameter to improve device density while addressing mechanical strength issues through carrier support and specialized handling procedures
Solution Approach 2:
The patent introduces carriers as intermediary support structures that hold the thinned substrates during fabrication processes. These carriers provide the necessary mechanical strength and support to prevent wafer deflection, cracking, and breakage, enabling the use of thinned substrates without compromising structural integrity
2Device complexity
If thinned substrates are processed without carriers or support, then device complexity is reduced and handling is simplified, but reliability deteriorates due to increased susceptibility to damage
Solution Approach 1:
The patent introduces carriers as intermediary support structures that hold the thinned substrates during fabrication processes. These carriers provide the necessary mechanical strength and support to prevent wafer deflection, cracking, and breakage, enabling the use of thinned substrates without compromising structural integrity
Solution Approach 2:
The patent applies preliminary action by pre-mounting substrates to carriers before fabrication processes begin. This preliminary mounting ensures mechanical support is in place before any processing steps that could cause damage, and carriers are removed only after device formation is complete
3Ease of manufacture
If standard fabrication tools are used on thinned substrates, then equipment cost is reduced, but manufacturing precision deteriorates due to wafer deflection and mechanical instability
Solution Approach 1:
The patent introduces carriers as intermediary support structures that hold the thinned substrates during fabrication processes. These carriers provide the necessary mechanical strength and support to prevent wafer deflection, cracking, and breakage, enabling the use of thinned substrates without compromising structural integrity
Solution Approach 2:
The patent modifies fabrication parameters including reduced power RF sputtering, adjusted etch rates, and controlled deposition conditions to accommodate thinned substrates mounted on carriers, ensuring manufacturing precision is maintained despite the changed substrate configuration
Data Source
AI summary
Implementations of a method of forming a plurality of semiconductor devices on a semiconductor substrate may include: providing a semiconductor substrate having a first surface, a second surface, a size, and a thickness where the second surface opposes the first surface and the thickness is between the first surface and the second surface. The method may include processing the semiconductor substrate through a plurality of semiconductor device fabrication processes to form a plurality of semiconductor devices on the first surface. The thickness may be between 100 microns and 575 microns and the size may be 150 mm. The semiconductor substrate may not be coupled with a carrier or support.