Very Thin Vapor Chamber IC Package for Hot Spot Heat Dissipation
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Solution Overview
Problem
High-performance computing IC packages face severe heat dissipation challenges due to localized hot spots in 2.5D and 3D IC structures, which can lead to reduced reliability and lifetime, and are compounded by inefficient heat conduction in conventional shield-cans that also fail to effectively shield electromagnetic waves.
Innovation Solution
The implementation of a very thin vapor chamber (VTVC) with a thickness less than 1 mm, thermally coupled to IC dies through a TIM or thermal adhesive layer, and extending both within and outside an encapsulating case, providing enhanced thermal conductivity and electromagnetic shielding by using materials like Ti, stainless steel, or copper, with directional capillary structures for efficient heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If conventional shield-cans are used to shield electromagnetic waves, then electromagnetic shielding is provided, but heat dissipation becomes inefficient due to poor thermal conductivity
Solution Approach 1:
The patent combines electromagnetic shielding and heat dissipation functions into a single integrated vapor chamber structure. The vapor chamber serves dual purposes: it shields electromagnetic waves from the IC components while simultaneously providing efficient heat dissipation through its high thermal conductivity, eliminating the need for separate shield-cans with poor thermal performance.
Solution Approach 2:
The vapor chamber is constructed from materials with high thermal conductivity such as copper, aluminum, or their alloys. These composite materials provide both the electromagnetic shielding properties needed to block electromagnetic waves and the thermal conductivity required for efficient heat dissipation, resolving the contradiction between shielding effectiveness and heat dissipation efficiency.
2Productivity
If IC dies are stacked in 3D or 2.5D structures for high performance computing, then computing power is increased, but localized hot spots are created that exceed allowable junction temperatures
Solution Approach 1:
The vapor chamber extends in multiple dimensions with specific geometric configurations (including protruding portions and varied thickness regions) to optimize heat dissipation pathways. This dimensional optimization allows the chamber to effectively manage heat from multiple stacked IC dies in 3D/2.5D structures, preventing localized hot spots while maintaining high computing performance.
Solution Approach 2:
The vapor chamber features non-uniform thickness with thinner regions (0.2-0.8 mm) positioned at critical heat dissipation locations and thicker regions elsewhere. This local quality variation optimizes thermal conductivity where needed most, allowing efficient heat removal from high-density IC stacks without creating hot spots that would exceed junction temperature limits.
3Reliability
If very thin vapor chamber with thickness less than 1 mm is used, then thermal conductivity is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The vapor chamber thickness is optimized within a specific parameter range (0.2-0.8 mm for proximal portions, 1-5 mm for distal portions) to balance thermal conductivity performance with manufacturability. This parameter optimization ensures sufficient thinness for high thermal efficiency while remaining within achievable manufacturing tolerances for precision fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The VTVC achieves thermal conductivity 2-10 times that of diamond, effectively managing heat generated by high-performance computing systems while reducing electromagnetic interference, thereby enhancing the reliability and longevity of IC packages.
Implementation Method 1
the first vapor chamber comprises a proximal portion and a distal portion, the proximal portion of the first vapor chamber is thermally coupled to a bottom surface of the semiconductor die
Implementation Method 2
with directional capillary structures for efficient heat dissipation
Data Source
AI summary
An IC package comprising a substrate with a first vapor chamber; a semiconductor die with a top surface, the semiconductor die stacked over the substrate; wherein the first vapor chamber disposed under the semiconductor die, the first vapor chamber comprises a proximal portion and a distal portion, the proximal portion of the first vapor chamber is thermally coupled to a bottom surface of the semiconductor die; and an encapsulating case encapsulating the semiconductor die and the first vapor chamber, wherein the proximal portion of the first vapor chamber is within the encapsulating case, and the distal portion of the first vapor chamber outside the encapsulating case.