Thin Vapor Chamber IC Package for Hot Spot Heat Dissipation

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Solution Overview

Problem

High-performance computing IC packages face severe heat dissipation challenges due to localized hot spots in 2.5D and 3D IC structures, which can lead to reduced reliability and lifetime, and are compounded by inefficient heat conduction in conventional shield-cans that also fail to effectively shield electromagnetic waves.

Innovation Solution

A very thin vapor chamber with a thickness of 0.3 mm to 0.6 mm is integrated into the IC package, featuring a proximal portion sealed within an encapsulating case and a distal portion extending outside, thermally coupled to a heat sink or liquid, with directional capillary structures for enhanced thermal conductivity and electromagnetic shielding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If a conventional shield-can is used to shield electromagnetic waves, then electromagnetic shielding is provided, but heat dissipation becomes inefficient

Engineering Contradiction:
Improveelectromagnetic wave shieldingVSAvoidheat dissipation efficiency
Core Design Contradiction:
Object-affected harmful factorsVSTemperature

Solution Approach 1:

The vapor chamber is designed to perform multiple functions simultaneously: it serves as an electromagnetic shield protecting the IC from electromagnetic waves while also functioning as a highly efficient heat dissipation device. This multi-functional component replaces the separate shield-can, eliminating the heat dissipation problem associated with conventional shielding materials.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The invention changes the material parameters from conventional shield-can materials (which have poor thermal conductivity) to vapor chamber materials with superior thermal properties. The vapor chamber operates on phase change principles, allowing heat to be rapidly conducted from the hot proximal portion to the distal portion, achieving heat dissipation efficiency up to 10 times that of diamond.

Inventive Principle:
Principle #35Parameter changes

2Temperature

If the vapor chamber thickness is reduced to 0.3-0.6mm for better heat dissipation, then thermal conductivity improves, but structural strength may be compromised

Engineering Contradiction:
Improvethermal conductivityVSAvoidmechanical strength
Core Design Contradiction:
TemperatureVSStrength

Solution Approach 1:

The invention employs a very thin vapor chamber wall (0.3-0.6mm) that functions as a flexible yet effective thermal conduction path. Despite the reduced thickness, the vapor chamber maintains sufficient mechanical strength through its sealed structure and the phase change mechanism, which compensates for the reduced material mass by utilizing latent heat of vaporization and condensation for efficient heat transfer.

Inventive Principle:
Principle #30Flexible shells and thin films

Solution Approach 2:

The vapor chamber utilizes phase transitions (liquid to vapor and vapor to liquid) to achieve high heat dissipation efficiency in a thin structure. The phase change process absorbs and releases large amounts of latent heat, enabling the thin vapor chamber to maintain effective thermal management despite its reduced thickness and associated mechanical constraints.

Inventive Principle:
Principle #36Phase transitions

3Power

If multiple heat sources are present in stacked chips, then computing performance increases, but localized hot spots exceed allowable junction temperatures

Engineering Contradiction:
Improvecomputing performanceVSAvoidjunction temperature
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The vapor chamber serves as a universal heat dissipation solution that can simultaneously manage heat from multiple heat sources in stacked chips. By placing the proximal portion over the stacked semiconductor chips, the vapor chamber collects heat from all chips through its large contact area and efficiently conducts it to the distal portion, preventing localized hot spots on any individual chip.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The invention transitions from two-dimensional heat dissipation (surface-level cooling) to three-dimensional heat management by utilizing the vertical space within the package. The vapor chamber extends from the proximal portion near the chips to the distal portion outside the package, creating a three-dimensional heat conduction path that efficiently removes heat from multiple stacked chips without increasing junction temperatures.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides superior thermal conductivity, up to 10 times that of diamond, and effective electromagnetic shielding, significantly improving heat dissipation and reducing the risk of IC failure while maintaining mechanical strength and reliability.

Implementation Method 1

a vapor chamber stacked over the semiconductor die, wherein the vapor chamber comprises a proximal portion and a distal portion

Methodology Applied
Scientific EffectVapor chamber phase change heat transfer: Phase Change

Implementation Method 2

directional capillary structures for enhanced thermal conductivity

Methodology Applied
Scientific EffectCapillary action: Capillary Action

Implementation Method 3

a shield-can needs to be disposed on the components to shield the electromagnetic waves

Methodology Applied
Scientific EffectElectromagnetic shielding: Faraday Cage

Data Source

PatentUS20240030097A1IC package with very thin vapor chamber for heat dissipation
Publication Date: 2024.01.25 CHEN WEI LIN
  • US20240030097A1 patent drawing
  • US20240030097A1 patent drawing
  • US20240030097A1 patent drawing

AI summary

An IC package comprises a substrate; a semiconductor die with a top surface, wherein the semiconductor die is stacked over the substrate; a vapor chamber stacked over the semiconductor die, wherein the vapor chamber comprises a proximal portion and a distal portion, the proximal portion covers the top surface of the semiconductor die; and an encapsulating case encapsulating the substrate, the semiconductor die and the vapor chamber, wherein the proximal portion of the vapor chamber is within the encapsulating case, and the distal portion of the vapor chamber extends from a wall of the encapsulating case.