Thinned CMOS Image Sensor Substrate with Light-Shielding Plug

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Solution Overview

Problem

The existing manufacturing methods for CMOS image sensors face challenges in achieving efficient light reception and sensing due to limitations in substrate thickness and light-shielding structures, which affect the overall performance and efficiency of image sensors.

Innovation Solution

A semiconductor structure is developed comprising a device substrate with a conductive film, dielectric film, and conductive plug, where the substrate is thinned and a trench is formed to expose the dielectric film, followed by the deposition of conductive and dielectric layers, and the formation of a conductive plug and shield pattern to enhance light reception and reduce manufacturing costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If the substrate is thinned to improve light reception efficiency, then the light reception efficiency is improved, but the substrate strength deteriorates

Engineering Contradiction:
Improvelight reception efficiencyVSAvoidsubstrate strength
Core Design Contradiction:
Illumination intensityVSStrength

Solution Approach 1:

The substrate thinning process is segmented into controlled stages with intermediate support structures. The substrate is divided into regions where some areas are thinned while others maintain structural integrity, allowing light reception improvement without compromising overall substrate strength.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Composite material structures are introduced to compensate for substrate strength loss during thinning. These composite structures provide mechanical support while allowing the thinned regions to maintain optimal thickness for light reception, resolving the contradiction between thinning benefits and strength requirements.

Inventive Principle:
Principle #40Composite materials

2Reliability

If a light-shielding structure is added to improve sensing performance, then the sensing performance is improved, but the device complexity increases

Engineering Contradiction:
Improvesensing performanceVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The light-shielding structure is merged with existing substrate layers or support structures rather than being added as a separate component. This integration approach provides the necessary light shielding for improved sensing performance while avoiding the complexity increase that would result from additional discrete structures.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

Existing substrate layers or support structures are designed to serve multiple functions: providing mechanical support, enabling light reception, and simultaneously acting as light-shielding elements. This multi-functionality approach improves sensing performance without increasing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS9054106B2Semiconductor structure and method for manufacturing the same
Publication Date: 2015.06.09 UNITED MICROELECTRONICS CORP
  • US9054106B2 patent drawing
  • US9054106B2 patent drawing
  • US9054106B2 patent drawing

AI summary

A semiconductor structure and a method for manufacturing the same are provided. A semiconductor structure includes a device substrate, a conductive film, a dielectric film and a conductive plug. The device substrate includes a semiconductor substrate and a conductive structure on an active surface of the semiconductor substrate. The device substrate has a substrate opening passing through the semiconductor substrate and exposing the conductive structure. The conductive film, the conductive plug and the dielectric film between the conductive film and the conductive plug are disposed in the substrate opening.