Thinned Semiconductor Package with Backside Die Protection
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Solution Overview
Problem
Existing semiconductor packages, such as CoWoS, face limitations in integration density and packaging efficiency, particularly in advanced applications like cloud computing and supercomputing, where smaller devices require even smaller and more efficient packaging solutions.
Innovation Solution
A method for manufacturing a semiconductor package involves forming a die with a protective layer on its backside, bonding it to an interposer, and encapsulating with molding material, which is then thinned to expose bond pads for electrical connections, allowing for efficient integration and protection during thermal processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the die is thinned to reduce package size, then the package occupies less area and is more compact, but the die becomes more susceptible to damage and cracking during thermal processes
Solution Approach 1:
A protective layer is formed on the backside of the die before bonding to the interposer. This preliminary protective measure prevents damage during subsequent thinning and thermal processes, allowing the die to be thinned safely while maintaining structural integrity throughout manufacturing
Solution Approach 2:
The protective layer acts as a cushioning element on the die backside, absorbing mechanical stresses and thermal expansion forces before they can cause cracking. This beforehand cushioning enables aggressive thinning to achieve compact packaging while preventing reliability failures
2Productivity
If the die is thinned to enable smaller packaging, then integration density improves, but manufacturing complexity increases due to additional protective measures required
Solution Approach 1:
The protective layer formation is merged with the existing die preparation process before interposer bonding. By combining these functions into a single integrated step, the manufacturing process achieves enhanced protection without proportionally increasing complexity, enabling efficient production of thinned packages
3Reliability
If molding material is applied to encapsulate the die, then the die is protected from damage, but the package thickness increases
Solution Approach 1:
The protective layer is applied to the die backside before bonding and encapsulation. This preliminary protection reduces the need for excessive molding material thickness, as the die is already protected from below, allowing for thinner overall package design while maintaining adequate protection
Solution Approach 2:
Protection is applied locally where most needed - the backside of the die receives the protective layer, while the front side maintains access for bonding and electrical connections. This localized approach provides maximum protection with minimum added thickness
Data Source
AI summary
A semiconductor package includes a first interconnect substrate, a first die and a first encapsulant. The first interconnect substrate includes a plurality of first conductive connectors thereon. The first die is bonded to the first interconnect substrate and has a protective layer thereon. The first encapsulant encapsulates the first conductive connectors, the first die and the protective layer.