Thinned Semiconductor Package With Dual-Side Metallization Support
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Solution Overview
Problem
Existing semiconductor package fabrication processes are complex and inefficient, particularly in minimizing package size while ensuring effective electrical contact and structural integrity.
Innovation Solution
The implementation of a thinned semiconductor package with a dual side metallization structure, including a die with a first and second side, a first metal layer coupled to the first side, a tin layer coupled to the first metal layer, a backside metal layer coupled to the second side, and a mold compound covering the die and metal layers, which facilitates the formation of bumps and supports the thinning process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the overall size of the semiconductor package is minimized, then economic benefits and technological benefits are improved, but the complexity of fabrication processes increases and manufacturing difficulty worsens
Solution Approach 1:
The patent applies segmentation by dividing the metallization structure into multiple layers (first metal layer, tin layer, backside metal layer) and separating the molding process into distinct stages. This allows each layer to be formed and processed independently, enabling miniaturization while maintaining manufacturing feasibility through modular fabrication steps.
Solution Approach 2:
The patent transitions from planar metallization to a multi-layer vertical structure by adding the tin layer between the first metal layer and the backside metal layer. This dimensional expansion allows for optimized electrical contact and structural integrity in a compact package volume, resolving the contradiction between small size and manufacturing complexity.
2Reliability
If a dual side metallization structure with multiple layers is implemented, then electrical contact and structural integrity are improved, but the number of fabrication steps increases
Solution Approach 1:
The patent applies preliminary action by forming the first metal layer and tin layer on the front side of the die before attaching the die to the substrate. This allows the metallization structure to be prepared in advance with optimized electrical contact properties, ensuring reliability while enabling parallel processing that maintains productivity.
Solution Approach 2:
The tin layer serves as an intermediary between the first metal layer and the backside metal layer, providing both electrical conductivity and structural bonding. This intermediate layer enables reliable electrical contact across multiple interfaces while the overall dual-side metallization structure is formed through integrated fabrication steps that maintain efficiency.
3Volume of moving object
If the die is thinned to reduce package size, then package volume is reduced, but structural support and handling difficulty worsen
Solution Approach 1:
The patent applies composite materials by combining the thinned die with multiple metallization layers (first metal layer, tin layer, backside metal layer) and encapsulating them together in a mold compound. This composite structure provides the necessary structural support and mechanical strength to handle the thinned die, enabling volume reduction without sacrificing durability.
Solution Approach 2:
The patent uses the nested doll principle by enclosing the thinned die and its metallization layers within the mold compound package. This nested structure protects the fragile thinned die while providing external structural support, allowing significant volume reduction while maintaining handling capability and mechanical strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the efficient formation of thin semiconductor packages with improved electrical contact and structural support, reducing the overall package size while maintaining economic and technological benefits.
Implementation Method 1
a mold compound coupled to the die. The mold compound may cover a plurality of sidewalls of the first metal layer and a plurality of sidewalls of the tin layer
Implementation Method 2
Electrically conductive layers may be formed using sputtering, evaporation, or electroplating operations
Implementation Method 3
Electrically conductive layers may be formed using sputtering, evaporation, or electroplating operations
Implementation Method 4
Electrically conductive layers may be formed using sputtering, evaporation, or electroplating operations
Data Source
AI summary
Implementations of semiconductor packages may include a die having a first side and a second side opposite the first side, a first metal layer coupled to the first side of the die, a tin layer coupled to the first metal layer, the first metal layer between the die and the tin layer, a backside metal layer coupled to the second side of the die, and a mold compound coupled to the die. The mold compound may cover a plurality of sidewalls of the first metal layer and a plurality of sidewalls of the tin layer and a surface of the mold compound is coplanar with a surface of the tin layer.