Thiomorpholine Dioxide Quencher for EUV Resist Evaporation
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Solution Overview
Problem
Current chemically amplified resist compositions face challenges in achieving high resolution and rectangularity with minimized roughness and dimensional stability, especially in EB and EUV lithography, due to evaporation issues with quenchers and limited acid diffusion control.
Innovation Solution
A chemically amplified resist composition incorporating a thiomorpholine dioxide compound as an amine quencher, which effectively controls acid diffusion and enhances contrast, resolution, and rectangularity, while preventing evaporation in vacuum environments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional quenchers are used in chemically amplified resist compositions, then acid diffusion control and contrast are improved, but evaporation occurs in vacuum environments during EB and EUV lithography
Solution Approach 1:
The patent changes the chemical parameters of the quencher by introducing a thiomorpholine dioxide structure with specific molecular weight and functional groups. This modification increases the boiling point and reduces vapor pressure, preventing evaporation in vacuum while maintaining acid diffusion control capability
Solution Approach 2:
The patent creates a composite quencher molecule combining the thiomorpholine dioxide core structure with specific substituent groups (R1-R6). This composite structure integrates both the vacuum stability required for EB/EUV lithography and the acid-quenching functionality needed for high-resolution patterning
2Manufacturing precision
If acid diffusion is controlled to improve resolution, then pattern rectangularity improves, but contrast and dissolution rate may be compromised
Solution Approach 1:
The thiomorpholine dioxide quencher provides localized acid neutralization at the pattern edges through its specific molecular structure and hydrogen bonding capability. This localized action sharpens the pattern boundaries for high rectangularity while maintaining adequate dissolution contrast through controlled acid diffusion
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high dissolution contrast, exposure latitude, and process adaptability, resulting in improved pattern profiles with minimized roughness and expanded focus margins, making it suitable for VLSI and photomask fabrication.
Implementation Method 1
A chemically amplified resist composition incorporating a thiomorpholine dioxide compound as an amine quencher, which effectively controls acid diffusion and enhances contrast, resolution, and rectangularity
Implementation Method 2
The addition effect of quenchers is significant. A number of amine quenchers were proposed as disclosed in Patent Documents 1 to 6.
Implementation Method 3
Chemically amplified resist compositions comprising an acid generator capable of generating an acid upon exposure to light or EB
Implementation Method 4
Chemically amplified resist compositions comprising an acid generator capable of generating an acid upon exposure to light or EB
Implementation Method 5
Since EUV and EB exposure is carried out in vacuum, a phenomenon arises that the sensitivity increases during the exposure step due to evaporation of quenchers. It would be desirable to have quenchers which are unlikely to evaporate.
Data Source
AI summary
A chemically amplified resist composition comprising a base polymer, an acid generator, and a basic compound of thiomorpholine dioxide structure has many advantages including a high contrast of alkaline dissolution rate before and after exposure, a good pattern profile after exposure, minimized roughness, and a wide focus margin. The resist composition which may be positive or negative is useful for the fabrication of VLSI and photomasks.