Thiophene Derivative CMOS Image Sensor Eliminates Color Filters

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Solution Overview

Problem

Conventional CMOS image sensors suffer from reduced sensitivity due to the absorption of approximately ⅔ of incident light by color filters, which also complicate the manufacturing process and require additional components like micro lenses.

Innovation Solution

A vertically-stacked CMOS image sensor using thiophene derivatives as photoelectric conversion units, specifically p-type and n-type thiophene layers forming a P-N heterojunction, which absorb blue, green, and red light without the need for color filters or micro lenses, with additional layers like electron and hole blocking layers enhancing light absorption and processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If color filters are used in the photodiode to detect specific wavelengths, then wavelength selectivity is improved, but light absorption is reduced by approximately 2/3 and sensitivity deteriorates

Engineering Contradiction:
Improvewavelength selectivityVSAvoidsensitivity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The invention extracts and removes the color filter component from the conventional photodiode structure. By eliminating the color filter that blocks 2/3 of incident light, the patent achieves full-spectrum light detection while maintaining wavelength selectivity through the photoelectric conversion characteristics of the photodiode material itself, thereby improving sensitivity without sacrificing manufacturing ease

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The photodiode is designed to perform multiple functions: it detects all wavelengths of incident light (blue, green, red) simultaneously and also performs signal processing functions. This multi-functional design eliminates the need for separate color filter components while maintaining the ability to distinguish different wavelengths through the photodiode's inherent photoelectric conversion properties

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If color filters are added to the photodiode structure, then wavelength detection capability is improved, but device complexity increases and additional components like micro lenses are required

Engineering Contradiction:
Improvewavelength detection capabilityVSAvoidstructure complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The invention merges the wavelength detection function directly into the photodiode structure by utilizing the photoelectric conversion characteristics of the photodiode material for different wavelength ranges. This integration eliminates the need for separate color filter layers and micro lens components, thereby maintaining full-color detection capability while significantly reducing device complexity and structural layers

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The photodiode structure is designed to universally detect all visible wavelengths (blue, green, red) simultaneously through its material properties, rather than requiring separate detection paths for each wavelength. This universal detection capability is achieved without adding complex filtering structures, thus maintaining versatility while simplifying the overall device architecture

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The CMOS image sensor achieves improved sensitivity and stability by directly converting light into electrical signals without color filters, simplifying the manufacturing process and increasing the sensor's stability against moisture and oxygen, while maintaining a compact structure.

Implementation Method 1

the first photoelectric conversion unit detects blue light and comprises: a first electrode; a second electrode; and a p-type thiophene derivative layer between the first electrode and the second electrode

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentUS7816713B2CMOS image sensor having thiophene derivatives
Publication Date: 2010.10.19 SAMSUNG ELECTRONICS CO LTD
  • US7816713B2 patent drawing
  • US7816713B2 patent drawing
  • US7816713B2 patent drawing

AI summary

Provided is a CMOS image sensor that uses thiophene derivatives. The CMOS image sensor includes first through third photoelectric conversion units vertically and sequentially stacked on a semiconductor substrate. The first photoelectric conversion unit detects blue light and comprises a first electrode, a second electrode, and a p-type thiophene derivative layer between the first electrode and the second electrode.