Thiosulfate Polymer Gate Dielectric for Low-Voltage OFETs
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Solution Overview
Problem
Current organic field effect transistors (OFETs) face challenges with gate dielectric materials that require high temperatures, are incompatible with flexible substrates, and have poor insulating properties, leading to increased supply voltages and limited suitability for low-voltage applications.
Innovation Solution
Development of photocurable or thermally curable thiosulfate-containing polymers with a glass transition temperature of at least 50°C, comprising an organic polymer backbone with pendant thiosulfate groups and charge balancing cations, which can be crosslinked to form a dielectric layer suitable for OFETs, allowing for low-temperature processing and improved electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional gate dielectric materials are used in OFETs, then insulating properties are improved, but processing temperature requirements increase and compatibility with flexible substrates is lost
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric material from conventional inorganic oxides to thiosulfate-containing polymers with specific glass transition temperatures (≥50°C). This compositional parameter change enables the material to achieve good insulating properties while being processable at low temperatures (<100°C) through solution-based methods, thus resolving the contradiction between insulating performance and processing temperature requirements
Solution Approach 2:
The patent employs composite polymer materials containing thiosulfate groups combined with charge-balancing cations to create a dielectric layer that integrates multiple functions: electrical insulation, low-temperature processing capability, and flexibility compatibility. This composite material approach allows simultaneous achievement of reliable insulating properties and low-processing-temperature compatibility
2Reliability
If conventional gate dielectric materials are used in OFETs, then insulating properties are improved, but suitability for flexible substrates is worsened
Solution Approach 1:
The patent modifies the material parameters by selecting polymers with glass transition temperatures of at least 50°C, which provides adequate thermal stability for flexible substrate processing while maintaining flexibility. This parameter optimization enables the dielectric layer to be compatible with flexible substrates while preserving necessary insulating properties
Solution Approach 2:
The patent uses thin film polymer dielectric layers that can be deposited on flexible substrates through solution processing methods. The thin film structure combined with the polymer material properties enables compatibility with flexible substrates while maintaining effective insulating performance
3Reliability
If conventional dielectric materials are used, then insulating properties are improved, but supply voltage requirements increase
Solution Approach 1:
The patent optimizes the dielectric material parameters including glass transition temperature (≥50°C) and chemical composition (thiosulfate-containing polymers) to achieve a balance between insulating performance and electrical breakdown strength. This enables operation at lower supply voltages while maintaining reliable insulation, thus resolving the contradiction between insulating properties and voltage requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the production of OFETs with enhanced electrical and insulating properties, compatible with flexible substrates, and suitable for low-voltage operations, using a single-layer dielectric material that can be processed at atmospheric pressures and room temperature.
Implementation Method 1
photocurable or thermally curable thiosulfate-containing polymers
Implementation Method 2
photocurable or thermally curable thiosulfate-containing polymers
Implementation Method 3
crosslinked to form a dielectric layer
Data Source
AI summary
A semiconductor device can be prepared using a precursor dielectric composition that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a Tg of at least 50° C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photo sensitizer component. The electronic device can be prepared by independently applying the precursor dielectric composition and an organic semiconductor composition to a substrate to form an applied precursor dielectric composition and an applied organic semiconductor composition, respectively, and subjecting the applied precursor dielectric composition to curing conditions to form a gate dielectric layer that is in physical contact with the applied organic semiconductor composition.