Solid-State Image Sensor Third-Electrode Bias for Pixel Charge Transfer

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Solution Overview

Problem

In solid-state imaging devices, inadequate voltage differences between lower electrodes and shield electrodes can deteriorate pixel properties, leading to decreased sensor sensitivity and residual images.

Innovation Solution

A solid-state imaging device with a third electrode disposed between adjacent first electrodes, electrically insulated, whose voltage is controlled to optimize the voltage difference and assist in charge discharge or transfer based on detection results, such as light amount or temperature.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a shield electrode is disposed between lower electrodes of pixels, then coupling between pixels is prevented and readout speed is improved, but pixel property deteriorates due to inadequate voltage difference

Engineering Contradiction:
Improvepixel propertyVSAvoidvoltage control complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The shield electrode voltage is changed from a fixed value to a dynamically adjustable value. The control circuit adjusts the shield electrode voltage based on detection results (such as light amount or temperature) to optimize the voltage difference between the lower electrode and shield electrode, thereby preventing deterioration of pixel property while maintaining the benefits of coupling prevention and readout speed improvement.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The voltage parameter of the shield electrode is made variable rather than fixed. By changing the shield electrode voltage according to detection results, the system optimizes the voltage difference parameter to prevent pixel property deterioration. This allows the system to adapt to different operating conditions and maintain optimal performance.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If shield electrode voltage is fixed, then device operation is simple, but pixel property deteriorates due to inadequate voltage difference

Engineering Contradiction:
Improvepixel propertyVSAvoidvoltage control
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The system uses detection results (such as light amount or temperature detection) to automatically determine the appropriate shield electrode voltage. The control circuit autonomously adjusts the voltage without requiring manual intervention, allowing the system to self-optimize pixel property based on actual operating conditions while maintaining ease of operation.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The system implements a feedback mechanism where detection results are used to control the shield electrode voltage. The detection unit monitors operating conditions (light amount, temperature), and the control circuit uses this feedback information to adjust the shield electrode voltage accordingly, ensuring optimal pixel property is maintained under varying conditions.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves pixel properties by preventing unnecessary charge discharge and enhancing sensor sensitivity, reducing residual images and improving image quality.

Implementation Method 1

a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges

Methodology Applied
Scientific EffectElectric field: Electric Field

Data Source

PatentUS11765483B2Solid-state imaging device, and electronic apparatus
Publication Date: 2023.09.19 SONY SEMICON SOLUTIONS CORP
  • US11765483B2 patent drawing
  • US11765483B2 patent drawing
  • US11765483B2 patent drawing

AI summary

Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.