Three-Electrode Diode Layout for Compact Independent Control
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Solution Overview
Problem
Existing optoelectronic devices with three electrodes face challenges in precise electrical contacting, especially when the devices are miniaturized, leading to issues with compactness and independent control of electrical potentials.
Innovation Solution
The optoelectronic device comprises a plurality of diodes with a stack of semiconductor layers, trenches separating the diodes, an electrically conductive layer insulated from the stack, and electrically conductive portions coupled to a third electrode, allowing for independent control of each diode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the device is formed with larger dimensions to facilitate electrical contacting, then the electrical contacting between electrodes is easier, but the compactness of the device deteriorates
Solution Approach 1:
The patent transitions from planar electrode arrangement to a three-dimensional vertical stacking architecture. Multiple electrode pairs are stacked vertically within a compact footprint, enabling complex electrical connections without increasing lateral dimensions. This vertical integration maintains device compactness while facilitating precise electrical contacting through controlled vertical pathways.
Solution Approach 2:
The patent implements nested electrode structures where electrodes are positioned within and around semiconductor layers in a hierarchical arrangement. Inner electrodes are surrounded by outer electrodes, creating concentric or layered configurations that maximize space utilization and enable multiple electrical contacts within minimal volume.
2Device complexity
If a common third electrode is distributed for all LEDs and photodiodes, then the device complexity is reduced, but the independent control of electrical potentials is lost
Solution Approach 1:
The patent segments the previously common third electrode into multiple independent third electrodes, with each electrode corresponding to specific diodes or functional regions. This segmentation enables independent potential control of different device regions while maintaining a manageable electrode count through strategic grouping and shared electrode structures for non-critical regions.
Solution Approach 2:
The patent implements electrodes with multiple functions: certain electrodes serve both as electrical contacts and as structural support elements, while others function as both signal terminals and reference potentials. This multi-functionality reduces the total number of electrodes needed while preserving independent control capabilities for critical regions.
3Ease of manufacture
If the third electrode is electrically coupled to the cathode to facilitate contacting, then the electrical contacting is easier, but the independent control of electrical potentials is lost
Solution Approach 1:
The patent separates the third electrode from direct electrical coupling with the cathode in regions where independent control is required. Instead of a universal cathode coupling, the third electrode is selectively connected to cathodes only in specific regions, allowing independent potential application to different diode groups while maintaining manufacturing simplicity through standardized connection patterns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables precise and independent control of each diode, improving the compactness and efficiency of the optoelectronic device while maintaining high external quantum efficiency.
Implementation Method 1
a third electrode in the form of a grid or of a Schottky contact... enabling, by generating a lateral electric field enabling to increase the EQE (external quantum efficiency)
Implementation Method 2
light-emitting diodes (also called LEDs)... for the forming of any light-emitting device
Data Source
AI summary
Optoelectronic device including: a plurality of diodes each including a portion of a stack of first and second semiconductor layers doped according to opposite types, a portion of the first layer of each diode being coupled to a first electrode; trenches running through the stack; a conductive layer arranged against side walls of the trenches, insulated from the stack, coupled to the second electrodes and which is interrupted in such a way that portions of the conductive layer arranged around each of the diodes are insulated from other portions of the conductive layer arranged around the other diodes; conductive portions arranged in the trenches, insulated from the electrically conductive layer and coupled to one another and to a third electrode; bottom walls of the trenches being formed at least by the second electrodes.