Through-Electrode Chip Layout for Thin High-Density Stacking
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Solution Overview
Problem
Existing semiconductor chips face challenges in achieving high-density stacking and efficient electrical connectivity while maintaining thin thickness and small size, particularly in the formation of through electrodes and insulating layers, which can lead to defects and inefficiencies in power supply.
Innovation Solution
The semiconductor chip design includes a body portion with through electrodes penetrating an insulating layer, connected to rear and front connection electrodes, with specific dimensions and configurations to ensure stable electrical connections and reduced resistance, and a metal-containing thin film layer with an undercut to enhance stability and heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through electrodes are formed to penetrate the insulating layer for electrical connection, then electrical connectivity between stacked chips is improved, but the risk of defects and manufacturing complexity increases
Solution Approach 1:
The insulating layer is formed with protrusions that extend into the through electrodes before the electrodes are fully formed. This preliminary action of creating the protruding insulating structures beforehand ensures proper positioning and electrical isolation during subsequent electrode formation processes, reducing defects and improving manufacturing precision while maintaining reliable electrical connectivity.
2Productivity
If multiple semiconductor chips are stacked vertically to increase processing capacity, then data processing volume is improved, but heat dissipation becomes more difficult
Solution Approach 1:
The insulating layer is segmented into multiple protrusions that extend into the through electrodes of stacked chips. These protruding insulating structures create thermal pathways and increase surface area for heat dissipation between chips, allowing heat to be more effectively managed in vertically stacked configurations while maintaining high data processing capacity.
3Length of moving object
If the insulating layer thickness is reduced to achieve thinner chip profiles, then chip thickness is improved, but the stability and isolation of through electrodes deteriorates
Solution Approach 1:
Instead of increasing insulating layer thickness in the vertical dimension, the solution extends insulating protrusions into the horizontal dimension by having them protrude into the through electrodes. This dimensional change provides enhanced electrical isolation and structural stability without increasing overall chip thickness, as the insulating function is achieved through lateral extension rather than vertical thickening.
Data Source
AI summary
A semiconductor chip may include: a body portion with a front surface and a rear surface; a pair of through electrodes penetrating the body portion; an insulating layer disposed over the rear surface of the body portion and the pair of through electrodes; and a rear connection electrode disposed over the insulating layer and connected simultaneously with the pair of through electrodes, wherein a distance between the pair of through electrodes is greater than twice a thickness of the insulating layer.