Semiconductor Package Through-Electrode Layout for Circuit Isolation
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Solution Overview
Problem
The challenge in manufacturing fine-patterned semiconductor devices with increased integration is achieving fine width and separation distances between patterns while minimizing the impact on circuit elements due to through-electrode structures.
Innovation Solution
A semiconductor device design featuring a substrate with cell and connection regions, including through-electrode structures that connect front and backside conductive patterns, and separation structures to maintain circuit integrity and minimize interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through-electrode structures are implemented to connect front and backside conductive patterns, then electrical connection efficiency is improved, but the influence on circuit elements increases
Solution Approach 1:
A separation structure is introduced as an intermediary element between the through-electrode structure and the circuit elements. This separation structure physically isolates the through-electrode from the circuit elements, preventing harmful influences while maintaining the electrical connection function between front and backside conductive patterns.
Solution Approach 2:
The device is divided into distinct functional regions: a connection region containing the through-electrode structure for electrical connection, and a cell region containing the circuit elements. This spatial segmentation isolates the through-electrode's influence to the connection region, protecting the circuit elements in the cell region from harmful effects.
2Adaptability or versatility
If fine-patterned structures are implemented to increase integration, then device functionality is improved, but manufacturing precision requirements increase
Solution Approach 1:
The design transitions from two-dimensional planar patterns to three-dimensional vertical structures. Through-electrode structures extend vertically through the substrate, and separation structures provide vertical isolation, allowing fine horizontal patterning without proportionally increasing manufacturing difficulty in the horizontal plane.
Solution Approach 2:
Different regions of the device have different structural characteristics optimized for their specific functions. The connection region features vertical through-electrode structures with separation structures, while the cell region maintains fine horizontal patterning for circuit elements. This local optimization allows fine patterning where needed without uniformly increasing manufacturing precision requirements across the entire device.
Data Source
AI summary
A semiconductor device includes: a substrate including a cell region and a connection region, and extending in a first direction, wherein the connection region includes a through-region; active regions protruding vertically from the first surface of the substrate; source/drain regions spaced apart from each other on the substrate in the first direction, and including: first source/drain regions having a portion at least partially overlapping the through-region, and second source/drain regions disposed on at least one side of the active regions on the substrate; first gate structures intersecting the active regions; a front structure including a front conductive pattern; a backside structure including a backside conductive pattern; and a through-electrode structure filling the through-region, and electrically connected to the front conductive pattern and the backside conductive pattern, and wherein at least a portion of a lower region of the through-electrode structure is in contact with the first source/drain regions.