Semiconductor Through-Electrode Metallic Diffusion Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor device manufacturing methods fail to effectively prevent metallic diffusion from through-electrodes that serve as alignment marks, which are crucial for accurately positioning insulating films in subsequent steps, leading to potential reliability issues in interconnection layers.
Innovation Solution
A semiconductor device and manufacturing method that incorporate a metallic-diffusion-preventing insulating layer surrounding the through-electrodes, formed on the semiconductor substrate to prevent metal diffusion, along with a precise positional alignment process using a hard mask and resist layers to ensure accurate positioning of through-holes and insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a through-electrode part is formed to serve as an alignment mark, then accurate positioning of insulating films is achieved, but metallic diffusion into the semiconductor substrate occurs causing reliability issues
Solution Approach 1:
The through-electrode structure is segmented into distinct functional zones: an upper through-electrode portion for alignment marking, and a lower through-electrode portion for electrical connection. The metallic-diffusion-preventing insulating layer is positioned at the boundary between these zones, separating the alignment function from the electrical connection function while preventing metal diffusion into the substrate.
Solution Approach 2:
A metallic-diffusion-preventing insulating layer is introduced as an intermediary element between the through-electrode and the semiconductor substrate. This insulating layer acts as a barrier that prevents direct contact between the conductive material and the substrate, thereby preventing metallic diffusion while allowing the through-electrode to maintain its alignment marking function.
2Reliability
If an insulating film is formed to prevent metallic diffusion, then reliability is improved, but the alignment precision with through-electrode parts deteriorates
Solution Approach 1:
The insulating film is applied locally rather than uniformly across the entire substrate. It is positioned specifically at the boundary between the through-electrode and the substrate, providing diffusion prevention only where needed. This localized application maintains the visibility and detectability of the through-electrode alignment marks while preventing metallic diffusion in the critical interface region.
3Ease of manufacture
If conventional methods are used to form through-electrodes, then manufacturing simplicity is maintained, but metallic diffusion causes interconnection layer failures
Solution Approach 1:
The metallic-diffusion-preventing insulating layer is formed in advance, before the conductive material is filled into the through-electrode. This preliminary formation of the insulating barrier ensures that when the conductive material is subsequently deposited, it cannot diffuse into the substrate, preventing reliability issues while maintaining a straightforward manufacturing sequence.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents metallic diffusion into the semiconductor substrate, ensuring reliable alignment and integration of insulating films with through-electrodes, thereby enhancing the reliability of interconnection layers and preventing siliciding of the semiconductor substrate.
Implementation Method 1
metallic diffusion into a semiconductor substrate from a through-electrode part
Data Source
AI summary
Provided is a semiconductor device that includes a semiconductor substrate, an interconnection layer that is formed on a first face of the semiconductor substrate, at least one of a structural element that is formed to the interconnection layer, or a structural element that is formed in the semiconductor substrate from the first face side of the semiconductor substrate, a semiconductor-through-electrode that is positioned and formed, from a second face side of the semiconductor substrate opposite to the first face, so as to have a predetermined positional relationship with respect to the structural element, and a metallic-diffusion-preventing insulating layer that is formed from the first face side of the semiconductor substrate in a position, and with a shape, surrounding the semiconductor-through-electrode in the semiconductor substrate.