Through-Electrode Direct Contact for Semiconductor Alignment
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Solution Overview
Problem
In semiconductor devices with through-electrodes, the shrinking diameter of connection plugs leads to increased misalignment and contact failure between through-electrodes and electro-conductive patterns, causing connection failures.
Innovation Solution
A semiconductor device design where the through-electrode extends through the substrate and insulating interlayer, directly connecting with the electro-conductive pattern, eliminating the need for a connection plug and allowing for increased misalignment tolerance, with the through-electrode being larger than connection plugs to reduce contact resistance and prevent damage during formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the diameter of the viaplug is shrunk to reduce device size, then the device scale is reduced, but the misalignment between through-electrode and viaplug increases causing contact failure
Solution Approach 1:
The invention extracts and eliminates the viaplug component from the connection structure. By making the through-electrode directly contact the electro-conductive pattern on the insulating interlayer without requiring a viaplug, the design removes the intermediate connection element that causes misalignment issues. This allows the device to maintain smaller dimensions while improving connection reliability through direct contact.
2Manufacturing precision
If the through-electrode and viaplug are misaligned, then manufacturing tolerance is exceeded, but contact failure occurs
Solution Approach 1:
The electro-conductive pattern on the insulating interlayer serves as an intermediary connection element between the through-electrode and the upper electro-conductive patterns. This intermediary structure provides a larger contact area and tolerance for misalignment, as the through-electrode can contact any portion of the electro-conductive pattern rather than requiring precise alignment with a small viaplug.
3Device complexity
If the diameter of connection plug is reduced, then device complexity is reduced, but contact resistance increases and damage occurs during formation
Solution Approach 1:
The invention changes the dimensional parameters of the through-electrode, making its diameter larger than that of traditional connection plugs. This parameter change allows the through-electrode to directly contact the electro-conductive pattern without requiring a separate small-diameter viaplug, thereby reducing the number of components while maintaining low contact resistance and preventing damage during formation processes.
Data Source
AI summary
A semiconductor device has a substrate, an insulating interlayer, an interconnect as one example of an electro-conductive pattern, a through-electrode, and a bump as one example of a connection terminal, wherein the insulating interlayer is positioned up above the surface of the substrate, the interconnect is positioned on the surface of the insulating interlayer, the through-electrode extends through the substrate and the insulating interlayer, from the back surface of the former to the surface of the latter, one end of which is connected to the interconnect, and the bump is provided on the back surface side of the substrate, and connected to the other end of the through-electrode.