Through Electrode Etch Stop Structure for Reliable Nanoscale Contacts
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Solution Overview
Problem
The challenge in semiconductor device manufacturing is to achieve reliable structural connections between thin and small-sized through electrode structures and contact wiring patterns, which requires precise etching and process adjustments to ensure structural reliability and prevent physical damage during the fabrication of nanoscale components.
Innovation Solution
The implementation of a semiconductor device design that includes a plurality of etch stop layers with different etch selectivities, alternately stacked to control the etching process, providing a stopper layer for precise etching and forming a reliable connection structure between the through electrode and contact wiring patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the sizes of the through electrode structure and wiring pattern are reduced to nanometer scale, then the semiconductor package can be made thinner and lighter, but the structural reliability and precision of connections deteriorate
Solution Approach 1:
The patent divides the etching process into multiple stages using a multi-layer etch stop structure (first etch stop layer, second etch stop layer, and third etch stop layer). Each layer serves as a stopper for specific etching steps, enabling precise control of the through electrode structure formation at nanometer scale while maintaining connection reliability.
Solution Approach 2:
The etch stop layers act as intermediary structures between the through electrode structure and the contact wiring pattern. These intermediate layers facilitate precise etching control and protect the contact wiring pattern from damage during the etching process, ensuring reliable connections at nanometer dimensions.
2Reliability
If precise etching control is implemented using multiple etch stop layers, then structural reliability is enhanced, but the device complexity increases
Solution Approach 1:
The etch stop structure is segmented into three distinct layers with different etch selectivities, allowing each layer to serve a specific function in the etching process. This segmentation enables precise control while maintaining a systematic and manageable structure.
Solution Approach 2:
Each etch stop layer is designed with specific local properties (different etch selectivities) tailored to its position and function. The first etch stop layer has different etch characteristics than the second and third layers, optimizing the etching process at each stage without requiring a completely different structure.
3Length of moving object
If the through electrode structure is made thinner to reduce package size, then the semiconductor device becomes more compact, but the risk of physical damage during fabrication increases
Solution Approach 1:
The etch stop layers are positioned beforehand to cushion and protect the thin through electrode structure and contact wiring pattern during the etching process. The first etch stop layer protects the lower portion, while the second and third layers protect the upper portion, preventing physical damage before it can occur.
Solution Approach 2:
The etch stop layers serve as intermediary protective structures that absorb the mechanical and chemical stresses of the etching process. These intermediate layers prevent direct contact between the harsh etching environment and the fragile nanoscale through electrode structure and contact wiring pattern.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate having a first surface adjacent to an active layer; a first insulating layer disposed on the first surface of the semiconductor substrate; a second insulating layer disposed on the first insulating layer; an etch stop structure interposed between the first insulating layer and the second insulating layer and including a plurality of etch stop layers; a contact wiring pattern disposed inside the second insulating layer and surrounded by at least one etch stop layer of the plurality of etch stop layers; and a through electrode structure configured to pass through the semiconductor substrate, the first insulating layer, and at least one etch stop layer of the plurality of etch stop layers in a vertical direction and contact the contact wiring pattern.