Through-Electrode Substrate Hole Profile for Reliable 3D Interconnects

Solution Overview

Problem

Current three-dimensional mounting techniques for semiconductor circuit substrates with through electrodes face challenges in achieving high integration due to limitations in forming fine through holes with consistent shapes and angles, which affect the formation of conductive layers and electrical continuity between substrate faces.

Innovation Solution

A through electrode substrate with a substrate having a through hole that satisfies specific inclination angle conditions at various positions, allowing for the formation of conductive layers that ensure electrical continuity, is achieved by using laser irradiation and etching processes to create through holes with varying diameters and angles, enabling effective stacking and connection of semiconductor circuit substrates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If laser irradiation is used to form fine through holes, then through hole fining is achieved, but inconsistent through hole shapes and angles are produced

Engineering Contradiction:

Improvethrough hole diameterVSAvoidthrough hole shape consistency

Core Design Contradiction:

Manufacturing precisionVSShape

Solution Approach 1:

The patent applies local quality by creating different regions within the through hole with different properties. Specifically, the through hole is designed to have a first region with a first inclination angle and a second region with a second inclination angle, where the angles differ. This allows the through hole to have optimized local characteristics - the first region provides good conductor formation properties while the second region maintains structural integrity, resolving the contradiction between achieving fine through holes and maintaining shape consistency.

Inventive Principle:

Principle #3Local quality

2Productivity

If through hole diameter is reduced for high integration, then stacking density increases, but electrical continuity between substrate faces deteriorates

Engineering Contradiction:

Improvestacking densityVSAvoidelectrical continuity

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent applies parameter changes by modifying the inclination angle parameter along the through hole depth. The through hole is designed with varying inclination angles - a first inclination angle in the upper region and a second inclination angle in the lower region. This parameter variation allows the through hole to maintain electrical continuity despite reduced diameter, as the angled regions facilitate better conductor adhesion and coverage, ensuring reliable electrical connection while achieving high stacking density.

Inventive Principle:

Principle #35Parameter changes

3Ease of manufacture

If conventional through hole formation is used, then substrate stacking is enabled, but conductor formation across the through hole becomes inconsistent

Engineering Contradiction:

Improvesubstrate stackingVSAvoidconductor formation consistency

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies local quality by creating different regions within the through hole with different properties. Specifically, the through hole is designed to have a first region with a first inclination angle and a second region with a second inclination angle, where the angles differ. This allows the through hole to have optimized local characteristics - the first region provides good conductor formation properties while the second region maintains structural integrity, resolving the contradiction between achieving fine through holes and maintaining shape consistency.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed solution enables the formation of through electrodes with consistent conductive layers across the substrate, enhancing electrical connectivity and supporting high integration and multi-functional semiconductor devices, such as three-dimensional mounting of semiconductor circuit substrates.

Implementation Method 1

a technique of irradiating a glass substrate with a laser beam is disclosed in order to form a fine through hole

Methodology Applied

Scientific EffectLaser irradiation: Laser

Data Source

PatentUS12183661B2Through electrode substrate and semiconductor device

Publication Date: 2024.12.31 DAI NIPPON PRINTING CO LTD

AI summary

A through electrode substrate includes a substrate having a through hole extending through between a first face and a second face, a diameter of the through hole not having a minimum value inside the through hole; and a conductor arranged inside the through hole, wherein the through hole has a shape having a value obtained by summing a first to an eighth inclination angle at a first to an eighth position, respectively, of an inner face of the through hole of 8.0° or more, each of the first to the eighth inclination angle is an angle of the inner face with respect to a center axis of the through hole, and the first to the eighth position correspond to positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75%, respectively, from the first face in a section from the first face to the second face.