Through Electrode Insulation for Semiconductor Manufacturing
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Solution Overview
Problem
Existing semiconductor device manufacturing methods do not provide a through process for forming semiconductor devices with through electrodes, lacking a method that minimizes changes to standard manufacturing conditions and reduces production steps.
Innovation Solution
A manufacturing method involving trench formation, insulating film deposition, conductor filling, etching to create a recess, and protective insulating film application, using polysilicon conductors and oxide/nitride films for insulation and field pattern formation, allowing for standard manufacturing conditions without changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a through electrode is formed in a semiconductor substrate, then electrical connection between stacked chips is achieved and device size is reduced, but the manufacturing process becomes more complex and deviates from standard semiconductor manufacturing conditions
Solution Approach 1:
The through electrode structure is segmented into multiple functional layers: conductor portion, side wall insulating film, and protective insulating film. This segmentation allows each component to be formed using separate, standardized manufacturing steps that can be integrated into existing processes, reducing overall manufacturing complexity while achieving the volume reduction benefit
Solution Approach 2:
The method performs preliminary actions by forming the conductor portion and side wall insulating film before final protective film application. This preliminary structuring enables subsequent standard semiconductor processing steps to proceed without modification, as the through electrode is already prepared with proper insulation and protection layers in place
2Reliability
If through electrodes are formed using existing fabrication methods, then electrical connection is achieved, but no standardized through process exists for manufacturing complete semiconductor devices
Solution Approach 1:
The manufacturing method is designed with universality by making the through electrode formation process compatible with standard semiconductor manufacturing conditions. The multi-functional approach allows the same process steps to form conductors, insulating films, and protective layers, enabling the method to be universally applied to various semiconductor device configurations without requiring specialized non-standard processes
Solution Approach 2:
The side wall insulating film serves a dual function: it insulates the conductor from the substrate and simultaneously provides a foundation for the protective insulating film. This self-service approach reduces the number of separate manufacturing steps needed, as each layer contributes to multiple functions, thereby improving ease of manufacture while maintaining reliable electrical connections
3Reliability
If conductors are exposed in the trench, then electrical connection is established, but contamination risk increases and additional protective steps are required
Solution Approach 1:
The protective insulating film is formed beforehand to cover the conductor portion before any contamination can occur. This prior cushioning approach ensures the conductor is protected from harmful factors throughout the manufacturing process, eliminating contamination risks while maintaining reliable electrical connections through the completed protective barrier
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the mass production of semiconductor devices with through electrodes by protecting conductors from contamination and allowing standard manufacturing processes to be applied unchanged, thereby improving productivity and reducing complexity.
Implementation Method 1
a conductor forming step of filling the interior of the trench for through electrode formation with a conductor
Implementation Method 2
an etching step of etching the conductor to form a recess such that the top face of the conductor is at a lower level than the top face of the semiconductor substrate
Data Source
AI summary
A through electrode is formed prior to fabricating a semiconductor device by using a standard manufacturing method. Aside face of the through electrode is insulated from a semiconductor substrate by an insulating film, while the top face thereof is covered with a protective insulating film. These insulating films covering the through electrode protect a conductor of the through electrode and prevent emission of a contaminant from the conductor. Standard manufacturing conditions can be applied without change.